Jianbing Peng , Ximeng Chen , Xiaoyu Lv , Yonghui Liu , Zhihao Li , Liangliang Tang , Jianxiong Shao
{"title":"硅衬底上的互嵌式背接触 (IBC) GaSb 热光伏电池","authors":"Jianbing Peng , Ximeng Chen , Xiaoyu Lv , Yonghui Liu , Zhihao Li , Liangliang Tang , Jianxiong Shao","doi":"10.1016/j.infrared.2025.105789","DOIUrl":null,"url":null,"abstract":"<div><div>This study proposes an interdigitated back contact (IBC) GaSb thermophotovoltaic cell with a silicon substrate, and optimizes various parameters of the cell structure to achieve optimal output performance. The output performance and efficiency of this IBC GaSb cell surpass conventional p-type emitter GaSb cell at temperatures below 1700 °C. At present, there is no application of IBC structure in the field of Thermophotovoltaic (TPV). Under the same emitter source and radiator conditions, due to the fact that the photo-generated carrier generation area of the IBC GaSb cell is closer to the bottom radiator, the actual operating temperature of IBC GaSb cell is lower. Therefore, in practical applications, IBC GaSb cell has a better temperature effect than that of conventional GaSb cell with p-type emitter in TPV field.</div></div>","PeriodicalId":13549,"journal":{"name":"Infrared Physics & Technology","volume":"147 ","pages":"Article 105789"},"PeriodicalIF":3.1000,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interdigitated back contact (IBC) GaSb thermophotovoltaic cell on silicon substrate\",\"authors\":\"Jianbing Peng , Ximeng Chen , Xiaoyu Lv , Yonghui Liu , Zhihao Li , Liangliang Tang , Jianxiong Shao\",\"doi\":\"10.1016/j.infrared.2025.105789\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study proposes an interdigitated back contact (IBC) GaSb thermophotovoltaic cell with a silicon substrate, and optimizes various parameters of the cell structure to achieve optimal output performance. The output performance and efficiency of this IBC GaSb cell surpass conventional p-type emitter GaSb cell at temperatures below 1700 °C. At present, there is no application of IBC structure in the field of Thermophotovoltaic (TPV). Under the same emitter source and radiator conditions, due to the fact that the photo-generated carrier generation area of the IBC GaSb cell is closer to the bottom radiator, the actual operating temperature of IBC GaSb cell is lower. Therefore, in practical applications, IBC GaSb cell has a better temperature effect than that of conventional GaSb cell with p-type emitter in TPV field.</div></div>\",\"PeriodicalId\":13549,\"journal\":{\"name\":\"Infrared Physics & Technology\",\"volume\":\"147 \",\"pages\":\"Article 105789\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-02-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared Physics & Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1350449525000829\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Physics & Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1350449525000829","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Interdigitated back contact (IBC) GaSb thermophotovoltaic cell on silicon substrate
This study proposes an interdigitated back contact (IBC) GaSb thermophotovoltaic cell with a silicon substrate, and optimizes various parameters of the cell structure to achieve optimal output performance. The output performance and efficiency of this IBC GaSb cell surpass conventional p-type emitter GaSb cell at temperatures below 1700 °C. At present, there is no application of IBC structure in the field of Thermophotovoltaic (TPV). Under the same emitter source and radiator conditions, due to the fact that the photo-generated carrier generation area of the IBC GaSb cell is closer to the bottom radiator, the actual operating temperature of IBC GaSb cell is lower. Therefore, in practical applications, IBC GaSb cell has a better temperature effect than that of conventional GaSb cell with p-type emitter in TPV field.
期刊介绍:
The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region.
Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine.
Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.