{"title":"Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy.","authors":"Wei-Chen Lin, Chiashain Chuang, Chun-Wei Kuo, Meng-Ting Wu, Jie-Ying Lee, Hsin-Hsuan Lee, Cheng-Hsueh Yang, Ji-Wei Ci, Tian-Shun Xie, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Jyh-Shyang Wang, Chi-Te Liang","doi":"10.1088/1361-6528/adbb74","DOIUrl":null,"url":null,"abstract":"<p><p>Given the promising applications of large magnetoresistance in the Dirac semimetal cadmium arsenide (Cd3As2), extensive research into Si-compatible Cd3As2 devices is highly desirable. To prevent surface degradation and oxidation, the implementation of a protection layer on Cd3As2 is imperative. In this study, two vastly different protecting layers were prepared by on top of two Cd3As2 samples. A zinc telluride layer was grown on top of one Cd3As2 film, giving rise to an ten-fold increased mobility, compared to that of the pristine Cd3As2 sample. Interestingly, unusual negative magnetoresistance is observed in the hexagonal boron nitride (h-BN)-capped Cd3As2 device when a magnetic field is applied perpendicularly to the Cd3As2 plane. This is in sharp contrast to the chiral anomaly that requires a magnetic field parallel to the Cd3As2 plane. We suggest that a protection layer on MBE-grown Cd3As2 should be useful for realizing its great device applications in magnetic sensing.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adbb74","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy.
Given the promising applications of large magnetoresistance in the Dirac semimetal cadmium arsenide (Cd3As2), extensive research into Si-compatible Cd3As2 devices is highly desirable. To prevent surface degradation and oxidation, the implementation of a protection layer on Cd3As2 is imperative. In this study, two vastly different protecting layers were prepared by on top of two Cd3As2 samples. A zinc telluride layer was grown on top of one Cd3As2 film, giving rise to an ten-fold increased mobility, compared to that of the pristine Cd3As2 sample. Interestingly, unusual negative magnetoresistance is observed in the hexagonal boron nitride (h-BN)-capped Cd3As2 device when a magnetic field is applied perpendicularly to the Cd3As2 plane. This is in sharp contrast to the chiral anomaly that requires a magnetic field parallel to the Cd3As2 plane. We suggest that a protection layer on MBE-grown Cd3As2 should be useful for realizing its great device applications in magnetic sensing.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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