锌注入氮化硅薄膜的研究

IF 0.5 Q4 PHYSICS, CONDENSED MATTER
V. V. Privezentsev, A. A. Firsov, V. S. Kulikauskas, D. A. Kiselev, B. R. Senatulin
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引用次数: 0

摘要

本文报道了以5 × 1016/cm2剂量和40 keV能量注入64Zn+离子的Si衬底上Si3N4膜界面纳米团簇的研究结果。采用气相法将氮化硅薄膜沉积在硅衬底上。然后将注入的样品在400-700℃的温度范围内,在空气中每步100℃退火1h。用扫描探针显微镜研究了样品的表面形貌。利用x射线光电子能谱和俄歇能谱研究了注入杂质和薄膜元素的分布以及Zn离子的化学状态。冲击脉冲法发现,在注入后,在Si3N4薄膜表面附近出现了尺寸约为100 nm或更小的单个金属锌纳米团簇。在退火过程中,它们生长并同时转变为ZnSiN2相,并可能在表面附近转变为氧化锌和硅化物相。在700℃退火后,在Si3N4薄膜中形成了尺寸约为100 nm的含锌纳米团簇。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Study of Zinc Implanted Silicon Nitride Film

Study of Zinc Implanted Silicon Nitride Film

The results of studying nanoclusters at the interface of a Si3N4 film on a Si substrate implanted with 64Zn+ ions with a dose of 5 × 1016/cm2 and an energy of 40 keV are presented. The Si3N4 film was deposited on a silicon substrate using a gas-phase method. Then the implanted samples were annealed in air in steps of 100°C for 1 h at each step in the temperature range of 400–700°C. The surface morphology of the samples was studied using scanning probe microscopy. The profiles of the implanted impurity and film elements, as well as the chemical state of the Zn ion, were studied using X-ray photoelectron and Auger electron spectroscopy. The shock pulse method revealed that after implantation individual metallic zinc nanoclusters with a size of about 100 nm or less are present near the surface of the Si3N4 film. During the annealing process, they grow and simultaneously transform into the ZnSiN2 phase and, possibly, into the phases of zinc oxide and silicide near the surface. After annealing at a temperature of 700°C, Zn-containing nanoclusters with a size of about 100 nm are formed in the Si3N4 film.

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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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