一步法合成细胞 S 型 N-ZnO/g-C3N4 以促进可见光驱动的二氧化碳还原和诺氟沙星降解

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Wei Liu, Wenna Hu, Jun Zhang
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引用次数: 0

摘要

在界面上构建精确的电子转移路径的异质结构对于广泛的光催化应用至关重要。在这种情况下,我们实现了一种简单的一步策略,通过S-scheme结构将电子从n掺杂ZnO (N-ZnO)的导带精确转移到g-C3N4的价带。利用一系列表征技术对所制备的光催化剂的不同结构和性能进行了协同验证。值得注意的是,通过x射线光电子能谱(XPS)证实了该体系内电子迁移的方向。电化学阻抗谱(EIS)分析表明,该异质结构具有较低的电荷转移电阻,光电流和光致发光分析表明,该异质结构具有较强的空间载流子分离能力。此外,复合材料还具有胞状几何形状和长期耐久性。这些都提高了光催化CO2还原和诺氟沙星(NOR)降解的性能。其中,含10 wt% N-ZnO (NZG-10)的优化复合材料在50 min内的NOR降解效率达到98.8%,降解速率常数分别是N-ZnO和g-C3N4的22.28倍和7.58倍。同时,NZG-10的CO产率是g-C3N4的2.98倍。这项工作为解决g-C3N4低光收集能力的开发方法和设计其他具有理想光催化性能的新型结构材料提供了有价值的见解,这些材料可广泛应用于清洁能源和生态环境管理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Facile one-step synthesis of cellular S-scheme N–ZnO/g-C3N4 toward boosted visible-light-driven CO2 reduction and norfloxacin degradation

The construction of heterostructures for precise electron-transfer paths at the interface is crucial to widespread photocatalytic applications. In this context, we have implemented a simple one-step strategy to precisely transfer electrons from the conduction band of N-doped ZnO (N–ZnO) to the valence band of g-C3N4 by an S-scheme structure. The diverse structures and properties of the fabricated photocatalysts were synergistically verified using a series of characterization techniques. Notably, the direction of electron migration within this system was confirmed through X-ray photoelectron spectroscopy (XPS). The electrochemical impedance spectroscopy (EIS) demonstrated low charge transfer resistance, and photocurrent along with photoluminescence analyses showed enhanced spatial charge carriers separation capability of the heterostructures. Furthermore, the composite presented the cellular geometry and the long-term durability. These brought about the boosted photocatalytic performance for CO2 reduction and norfloxacin (NOR) degradation. Specifically, the optimized composite containing 10 wt% N–ZnO (NZG-10) achieved a NOR degradation efficiency of 98.8% within 50 min, with a remarkable rate constant of 22.28 and 7.58 times that of N–ZnO and g-C3N4, respectively. Simultaneously, the NZG-10 was 2.98 times the CO yield of g-C3N4. This work offers valuable insights into developing methodologies to address the low light-harvesting capability of g-C3N4 and designing other novel structural materials with desirable photocatalytic performance for widespread applications in clean energy and eco-environment management.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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