强电场作用下铬在氧化硅表面的迁移

IF 0.5 Q4 PHYSICS, CONDENSED MATTER
I. V. Uvarov, L. A. Mazaletskiy
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引用次数: 0

摘要

作为MEMS开关平面电极的粘附材料,铬在热氧化硅片表面的迁移被证明。电压脉冲导致驱动电极上铬和碳纳米结构的形成并向信号电极生长。随着时间的推移,结构达到微米大小并覆盖电极间隙。迁移由约108v /m的电场激活。第一个结构在施加102-105个脉冲后出现,但随着脉冲的增长,这个过程会加速。与金电极相比,铂电极的迁移速度更快,所需的电压也更低。材料转移不仅发生在电极间隙,而且发生在正极周围的SiO2表面。这种材料也会在Pt和Au薄膜下移动,将它们从衬底上剥离。所描述的现象会损坏静电驱动的MEMS开关和其他使用高电场的器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Migration of Chromium on the Silicon Oxide Surface under a Strong Electric Field

Migration of Chromium on the Silicon Oxide Surface under a Strong Electric Field

Migration of chromium, which acts as an adhesive material for planar electrodes of a MEMS switch, over the surface of a thermally oxidized silicon wafer is demonstrated. Voltage pulses lead to the formation of chromium and carbon nanostructures on the driving electrode and their growth towards the signal electrode. Over time, the structures reach micron sizes and cover the interelectrode gap. Migration is activated by an electric field of about 108 V/m. The first structures appear after applying 102–105 pulses, but the process accelerates as they grow. For platinum electrodes, migration is faster and requires a lower voltage compared to gold electrodes. Material transfer occurs not only in the gap between the electrodes but also on the SiO2 surface around the positive electrode. The material also moves under the Pt and Au films, peeling them off from the substrate. The described phenomena can damage electrostatically actuated MEMS switches and other devices that use high electric fields.

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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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