基于增益增强鉴相器和采样电容缩减的ii型参考采样锁相环的分析与设计

IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tailong Xu;Haoran Li;Xi Meng;Xiangxun Zhan;Yatao Peng;Jun Yin;Shiheng Yang;Chao Fan;Zhixiang Huang;Rui P. Martins;Pui-In Mak
{"title":"基于增益增强鉴相器和采样电容缩减的ii型参考采样锁相环的分析与设计","authors":"Tailong Xu;Haoran Li;Xi Meng;Xiangxun Zhan;Yatao Peng;Jun Yin;Shiheng Yang;Chao Fan;Zhixiang Huang;Rui P. Martins;Pui-In Mak","doi":"10.1109/TCSII.2025.3526921","DOIUrl":null,"url":null,"abstract":"This brief analyzes the phase noise (PN) and reference (REF) spur performance of the reference-sampling (RS) PLL when the total sampling capacitor <inline-formula> <tex-math>$(C_{\\mathrm { S}})$ </tex-math></inline-formula> is reduced to save the power consumption of the crystal oscillator (XO) buffer. Based on the analysis, the saved power consumption from the XO buffer can be utilized to improve the PN of the voltage-controlled oscillator (VCO), which compensates for the in-band PN degradation induced by the <inline-formula> <tex-math>$C_{\\mathrm { S}}$ </tex-math></inline-formula> reduction. Based on this theme, we can reduce the total power consumption of the RS-PLL and the XO buffer without degrading the output root-mean-square (RMS) jitter by reducing <inline-formula> <tex-math>$C_{\\mathrm { S}}$ </tex-math></inline-formula> if a VCO with a high figure-of-merit (FoM) and a low <inline-formula> <tex-math>$1/{f}^{3}$ </tex-math></inline-formula> PN corner frequency is available. A type-II RS-PLL prototype utilizing a gain-boosting RS phase detector to suppress the voltage-to-current <inline-formula> <tex-math>$(G_{\\mathrm { M}})$ </tex-math></inline-formula> circuit noise is designed to verify the presented design strategy. With the aid of an inverse-class-F VCO with a FoM of 190.4 dBc/Hz at 1 MHz offset frequency and a <inline-formula> <tex-math>$1/{f}^{3}$ </tex-math></inline-formula> PN corner frequency of 300 kHz across the frequency tuning range from 5.2 GHz to 6.1 GHz, the RS-PLL prototype fabricated in a 65-nm CMOS achieves low RMS jitter and REF spur of 64.8 fs and -84.1 dBc, respectively, while dissipating 6.9 mW, corresponding to a jitter-power FoM (<inline-formula> <tex-math>$\\rm FoM{_{J}}$ </tex-math></inline-formula>) of -255.4 dB.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 3","pages":"439-443"},"PeriodicalIF":4.0000,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis and Design of a Type-II Reference-Sampling PLL Using Gain-Boosting Phase Detector With Sampling Capacitor Reduction\",\"authors\":\"Tailong Xu;Haoran Li;Xi Meng;Xiangxun Zhan;Yatao Peng;Jun Yin;Shiheng Yang;Chao Fan;Zhixiang Huang;Rui P. Martins;Pui-In Mak\",\"doi\":\"10.1109/TCSII.2025.3526921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief analyzes the phase noise (PN) and reference (REF) spur performance of the reference-sampling (RS) PLL when the total sampling capacitor <inline-formula> <tex-math>$(C_{\\\\mathrm { S}})$ </tex-math></inline-formula> is reduced to save the power consumption of the crystal oscillator (XO) buffer. Based on the analysis, the saved power consumption from the XO buffer can be utilized to improve the PN of the voltage-controlled oscillator (VCO), which compensates for the in-band PN degradation induced by the <inline-formula> <tex-math>$C_{\\\\mathrm { S}}$ </tex-math></inline-formula> reduction. Based on this theme, we can reduce the total power consumption of the RS-PLL and the XO buffer without degrading the output root-mean-square (RMS) jitter by reducing <inline-formula> <tex-math>$C_{\\\\mathrm { S}}$ </tex-math></inline-formula> if a VCO with a high figure-of-merit (FoM) and a low <inline-formula> <tex-math>$1/{f}^{3}$ </tex-math></inline-formula> PN corner frequency is available. A type-II RS-PLL prototype utilizing a gain-boosting RS phase detector to suppress the voltage-to-current <inline-formula> <tex-math>$(G_{\\\\mathrm { M}})$ </tex-math></inline-formula> circuit noise is designed to verify the presented design strategy. With the aid of an inverse-class-F VCO with a FoM of 190.4 dBc/Hz at 1 MHz offset frequency and a <inline-formula> <tex-math>$1/{f}^{3}$ </tex-math></inline-formula> PN corner frequency of 300 kHz across the frequency tuning range from 5.2 GHz to 6.1 GHz, the RS-PLL prototype fabricated in a 65-nm CMOS achieves low RMS jitter and REF spur of 64.8 fs and -84.1 dBc, respectively, while dissipating 6.9 mW, corresponding to a jitter-power FoM (<inline-formula> <tex-math>$\\\\rm FoM{_{J}}$ </tex-math></inline-formula>) of -255.4 dB.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 3\",\"pages\":\"439-443\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-01-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10833673/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10833673/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文简要分析了在减小总采样电容$(C_{\ mathm {S}})$以节省晶体振荡器(XO)缓冲器的功耗时,参考采样(RS)锁相环的相位噪声(PN)和参考杂散(REF)性能。基于分析,XO缓冲器节省的功耗可用于提高压控振荡器(VCO)的PN,以补偿由C_{\mathrm {S}}$降低引起的带内PN退化。基于此主题,我们可以通过降低$C_{\mathrm {S}}$来降低RS-PLL和XO缓冲器的总功耗,而不会降低输出均方根(RMS)抖动,如果有一个具有高品质因数(FoM)和低$1/{f}^{3}$ PN角频率的VCO。设计了一个ii型RS- pll原型,利用增益增强的RS鉴相器来抑制电压-电流$(G_{\ mathm {M}})$电路噪声,以验证所提出的设计策略。在1 MHz偏置频率下,FoM为190.4 dBc/Hz,在5.2 GHz至6.1 GHz的频率调谐范围内,角频为300 kHz,利用反f类VCO,在65nm CMOS上制作的RS-PLL原型实现了低RMS抖动和低REF杂散,分别为64.8 fs和-84.1 dBc,而功耗为6.9 mW,对应于抖动功率FoM ($\rm FoM{_{J}}$)为-255.4 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis and Design of a Type-II Reference-Sampling PLL Using Gain-Boosting Phase Detector With Sampling Capacitor Reduction
This brief analyzes the phase noise (PN) and reference (REF) spur performance of the reference-sampling (RS) PLL when the total sampling capacitor $(C_{\mathrm { S}})$ is reduced to save the power consumption of the crystal oscillator (XO) buffer. Based on the analysis, the saved power consumption from the XO buffer can be utilized to improve the PN of the voltage-controlled oscillator (VCO), which compensates for the in-band PN degradation induced by the $C_{\mathrm { S}}$ reduction. Based on this theme, we can reduce the total power consumption of the RS-PLL and the XO buffer without degrading the output root-mean-square (RMS) jitter by reducing $C_{\mathrm { S}}$ if a VCO with a high figure-of-merit (FoM) and a low $1/{f}^{3}$ PN corner frequency is available. A type-II RS-PLL prototype utilizing a gain-boosting RS phase detector to suppress the voltage-to-current $(G_{\mathrm { M}})$ circuit noise is designed to verify the presented design strategy. With the aid of an inverse-class-F VCO with a FoM of 190.4 dBc/Hz at 1 MHz offset frequency and a $1/{f}^{3}$ PN corner frequency of 300 kHz across the frequency tuning range from 5.2 GHz to 6.1 GHz, the RS-PLL prototype fabricated in a 65-nm CMOS achieves low RMS jitter and REF spur of 64.8 fs and -84.1 dBc, respectively, while dissipating 6.9 mW, corresponding to a jitter-power FoM ( $\rm FoM{_{J}}$ ) of -255.4 dB.
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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