{"title":"12.6 pj /转换温度传感器,温度电压灵敏度0.98 mv /K","authors":"Jiajun Tang;Xiyuan Tang","doi":"10.1109/TCSII.2025.3530257","DOIUrl":null,"url":null,"abstract":"This brief proposes a low-power and energy-efficient CMOS temperature sensor circuit. It presents an integrated transducer and readout design with a novel 1-bit temperature-voltage (T-V) comparator-embedded 12-bit SAR ADC. Thanks to the proposed load-capacitor-imbalance technique, the temperature-voltage sensitivity is increased, thus improving system energy efficiency. Besides, an on-chip PTAT voltage source was introduced to further enhance temperature-voltage sensitivity and eliminate the need for additional off-chip voltage references in temperature-voltage conversion. According to the post-layout simulation, the temperature sensor achieves a 0.98-mV/K T-V sensitivity under a 28-nm CMOS process, demonstrating over 50% improvement compared to prior arts. It consumes 12.6-pJ per conversion, achieving a 0.15K resolution under a 0.6-V power supply, thus realizing a state-of-the-art resolution Figure-of-Merit (FoM) of 0.29-pJ<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>K2.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 3","pages":"449-453"},"PeriodicalIF":4.0000,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 12.6-pJ/Conversion Temperature Sensor With 0.98-mV/K Temperature-Voltage Sensitivity\",\"authors\":\"Jiajun Tang;Xiyuan Tang\",\"doi\":\"10.1109/TCSII.2025.3530257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief proposes a low-power and energy-efficient CMOS temperature sensor circuit. It presents an integrated transducer and readout design with a novel 1-bit temperature-voltage (T-V) comparator-embedded 12-bit SAR ADC. Thanks to the proposed load-capacitor-imbalance technique, the temperature-voltage sensitivity is increased, thus improving system energy efficiency. Besides, an on-chip PTAT voltage source was introduced to further enhance temperature-voltage sensitivity and eliminate the need for additional off-chip voltage references in temperature-voltage conversion. According to the post-layout simulation, the temperature sensor achieves a 0.98-mV/K T-V sensitivity under a 28-nm CMOS process, demonstrating over 50% improvement compared to prior arts. It consumes 12.6-pJ per conversion, achieving a 0.15K resolution under a 0.6-V power supply, thus realizing a state-of-the-art resolution Figure-of-Merit (FoM) of 0.29-pJ<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula>K2.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 3\",\"pages\":\"449-453\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10843399/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10843399/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 12.6-pJ/Conversion Temperature Sensor With 0.98-mV/K Temperature-Voltage Sensitivity
This brief proposes a low-power and energy-efficient CMOS temperature sensor circuit. It presents an integrated transducer and readout design with a novel 1-bit temperature-voltage (T-V) comparator-embedded 12-bit SAR ADC. Thanks to the proposed load-capacitor-imbalance technique, the temperature-voltage sensitivity is increased, thus improving system energy efficiency. Besides, an on-chip PTAT voltage source was introduced to further enhance temperature-voltage sensitivity and eliminate the need for additional off-chip voltage references in temperature-voltage conversion. According to the post-layout simulation, the temperature sensor achieves a 0.98-mV/K T-V sensitivity under a 28-nm CMOS process, demonstrating over 50% improvement compared to prior arts. It consumes 12.6-pJ per conversion, achieving a 0.15K resolution under a 0.6-V power supply, thus realizing a state-of-the-art resolution Figure-of-Merit (FoM) of 0.29-pJ$\cdot $ K2.
期刊介绍:
TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes:
Circuits: Analog, Digital and Mixed Signal Circuits and Systems
Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic
Circuits and Systems, Power Electronics and Systems
Software for Analog-and-Logic Circuits and Systems
Control aspects of Circuits and Systems.