12.6 pj /转换温度传感器,温度电压灵敏度0.98 mv /K

IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jiajun Tang;Xiyuan Tang
{"title":"12.6 pj /转换温度传感器,温度电压灵敏度0.98 mv /K","authors":"Jiajun Tang;Xiyuan Tang","doi":"10.1109/TCSII.2025.3530257","DOIUrl":null,"url":null,"abstract":"This brief proposes a low-power and energy-efficient CMOS temperature sensor circuit. It presents an integrated transducer and readout design with a novel 1-bit temperature-voltage (T-V) comparator-embedded 12-bit SAR ADC. Thanks to the proposed load-capacitor-imbalance technique, the temperature-voltage sensitivity is increased, thus improving system energy efficiency. Besides, an on-chip PTAT voltage source was introduced to further enhance temperature-voltage sensitivity and eliminate the need for additional off-chip voltage references in temperature-voltage conversion. According to the post-layout simulation, the temperature sensor achieves a 0.98-mV/K T-V sensitivity under a 28-nm CMOS process, demonstrating over 50% improvement compared to prior arts. It consumes 12.6-pJ per conversion, achieving a 0.15K resolution under a 0.6-V power supply, thus realizing a state-of-the-art resolution Figure-of-Merit (FoM) of 0.29-pJ<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>K2.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 3","pages":"449-453"},"PeriodicalIF":4.0000,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 12.6-pJ/Conversion Temperature Sensor With 0.98-mV/K Temperature-Voltage Sensitivity\",\"authors\":\"Jiajun Tang;Xiyuan Tang\",\"doi\":\"10.1109/TCSII.2025.3530257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This brief proposes a low-power and energy-efficient CMOS temperature sensor circuit. It presents an integrated transducer and readout design with a novel 1-bit temperature-voltage (T-V) comparator-embedded 12-bit SAR ADC. Thanks to the proposed load-capacitor-imbalance technique, the temperature-voltage sensitivity is increased, thus improving system energy efficiency. Besides, an on-chip PTAT voltage source was introduced to further enhance temperature-voltage sensitivity and eliminate the need for additional off-chip voltage references in temperature-voltage conversion. According to the post-layout simulation, the temperature sensor achieves a 0.98-mV/K T-V sensitivity under a 28-nm CMOS process, demonstrating over 50% improvement compared to prior arts. It consumes 12.6-pJ per conversion, achieving a 0.15K resolution under a 0.6-V power supply, thus realizing a state-of-the-art resolution Figure-of-Merit (FoM) of 0.29-pJ<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula>K2.\",\"PeriodicalId\":13101,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"volume\":\"72 3\",\"pages\":\"449-453\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems II: Express Briefs\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10843399/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10843399/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种低功耗、高能效的CMOS温度传感器电路。它提出了一种集成传感器和读出设计,采用新颖的1位温度电压(T-V)比较器嵌入式12位SAR ADC。采用负载-电容不平衡技术,提高了系统的温度-电压敏感性,从而提高了系统的能效。此外,还引入了片上PTAT电压源,进一步提高了温度-电压敏感性,消除了在温度-电压转换中需要额外的片外电压参考。经布局后仿真,该温度传感器在28纳米CMOS工艺下达到0.98 mv /K的T-V灵敏度,比现有技术提高50%以上。它每次转换消耗12.6 pj,在0.6 v电源下实现0.15K分辨率,从而实现最先进的分辨率性能图(FoM)为0.29 pj $\cdot $ K2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12.6-pJ/Conversion Temperature Sensor With 0.98-mV/K Temperature-Voltage Sensitivity
This brief proposes a low-power and energy-efficient CMOS temperature sensor circuit. It presents an integrated transducer and readout design with a novel 1-bit temperature-voltage (T-V) comparator-embedded 12-bit SAR ADC. Thanks to the proposed load-capacitor-imbalance technique, the temperature-voltage sensitivity is increased, thus improving system energy efficiency. Besides, an on-chip PTAT voltage source was introduced to further enhance temperature-voltage sensitivity and eliminate the need for additional off-chip voltage references in temperature-voltage conversion. According to the post-layout simulation, the temperature sensor achieves a 0.98-mV/K T-V sensitivity under a 28-nm CMOS process, demonstrating over 50% improvement compared to prior arts. It consumes 12.6-pJ per conversion, achieving a 0.15K resolution under a 0.6-V power supply, thus realizing a state-of-the-art resolution Figure-of-Merit (FoM) of 0.29-pJ $\cdot $ K2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信