使用先进SPICE模型的GaN HEMT太赫兹探测器带宽优化

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-02-20 DOI:10.1016/j.mejo.2025.106600

Chaoyu Zhang, Xiaolong Hu

{"title":"使用先进SPICE模型的GaN HEMT太赫兹探测器带宽优化","authors":"Chaoyu Zhang, Xiaolong Hu","doi":"10.1016/j.mejo.2025.106600","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a solution to address the problems for AlGaN/GaN HEMT terahertz detectors. An ASM GaN HEMT model is first developed and validated for the GaN HEMT terahertz detectors using ICCAP simulation. Then, a common-source amplification mode GaN HEMT amplifier with a large impedance is selected for integration with the detector, which offers a higher input impedance and thereby facilitates a better impedance match with the detector. An optimal bandwidth of 212.1 MHz was obtained when the gate voltage of the IF amplifier is at −1.8 V. Finally, the circuit matching is optimized between the GaN HEMT detector and the IF amplifier, and the bandwidth of the integrated chip reaches 626.0 MHz, representing an increase of about 195 % compared to the configuration without circuit matching.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"158 ","pages":"Article 106600"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bandwidth optimization for GaN HEMT terahertz detectors using the advanced SPICE model\",\"authors\":\"Chaoyu Zhang, Xiaolong Hu\",\"doi\":\"10.1016/j.mejo.2025.106600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper presents a solution to address the problems for AlGaN/GaN HEMT terahertz detectors. An ASM GaN HEMT model is first developed and validated for the GaN HEMT terahertz detectors using ICCAP simulation. Then, a common-source amplification mode GaN HEMT amplifier with a large impedance is selected for integration with the detector, which offers a higher input impedance and thereby facilitates a better impedance match with the detector. An optimal bandwidth of 212.1 MHz was obtained when the gate voltage of the IF amplifier is at −1.8 V. Finally, the circuit matching is optimized between the GaN HEMT detector and the IF amplifier, and the bandwidth of the integrated chip reaches 626.0 MHz, representing an increase of about 195 % compared to the configuration without circuit matching.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"158 \",\"pages\":\"Article 106600\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239125000499\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000499","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种解决AlGaN/GaN HEMT太赫兹探测器问题的方案。首先开发了ASM GaN HEMT模型，并使用ICCAP模拟验证了GaN HEMT太赫兹探测器。然后，选择大阻抗的共源放大模式GaN HEMT放大器与检测器集成，提供更高的输入阻抗，从而更好地与检测器匹配阻抗。当中频放大器栅极电压为−1.8 V时，可获得212.1 MHz的最佳带宽。最后，优化了GaN HEMT探测器与中频放大器之间的电路匹配，集成芯片的带宽达到626.0 MHz，比没有电路匹配的配置提高了约195%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Bandwidth optimization for GaN HEMT terahertz detectors using the advanced SPICE model

This paper presents a solution to address the problems for AlGaN/GaN HEMT terahertz detectors. An ASM GaN HEMT model is first developed and validated for the GaN HEMT terahertz detectors using ICCAP simulation. Then, a common-source amplification mode GaN HEMT amplifier with a large impedance is selected for integration with the detector, which offers a higher input impedance and thereby facilitates a better impedance match with the detector. An optimal bandwidth of 212.1 MHz was obtained when the gate voltage of the IF amplifier is at −1.8 V. Finally, the circuit matching is optimized between the GaN HEMT detector and the IF amplifier, and the bandwidth of the integrated chip reaches 626.0 MHz, representing an increase of about 195 % compared to the configuration without circuit matching.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.