CsPbCl3:Yb3+纳米晶体:胶体稳定富镱反应副产物对发光下转换性能的不利影响

Q2 Engineering
Mathis Van de Voorde , Damien Hudry , Dmitry Busko , Bryce S. Richards , Rebecca Saive
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引用次数: 0

摘要

近红外(NIR)发射下变换器的发展是通过有效的光管理来提高光伏输出的一条有前途的途径。量子切割Yb3+掺杂CsPbCl3纳米晶体(nc)由于其高光致发光量子产率(PLQY > 100%)和吸引人的近红外光谱特性(包括高吸收横截面和吸收和发射光谱之间最小重叠)而对该应用很感兴趣。本文采用热注射法制备了CsPbCl3:Yb3+ NCs,并利用x射线衍射、扫描透射电子显微镜、能量色散x射线光谱、荧光寿命和量子产率等结构/光学表征方法对其进行了研究。我们发现热注入法容易形成胶体稳定的富镱反应副产物。将这些副产物与nc分离后,NIR PLQY相对增加了46%。虽然本研究记录的PLQY值比其他研究低4-7倍,但这些发现可能解释了该材料报道的光致发光效率的一些差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

CsPbCl3:Yb3+ nanocrystals: Adverse effects of colloidally stable ytterbium-rich reaction by-products on luminescent down-conversion performance

CsPbCl3:Yb3+ nanocrystals: Adverse effects of colloidally stable ytterbium-rich reaction by-products on luminescent down-conversion performance
The development of near infra-red (NIR) emitting down-converters is a promising route for improving photovoltaic output through efficient light management. Quantum-cutting Yb3+-doped CsPbCl3 nanocrystals (NCs) are interesting for this application due to their high photoluminescence quantum yields (PLQY >100 %) and attractive NIR spectral properties which include high absorption cross section and minimal overlap between absorption and emission spectra. In this work, we fabricated CsPbCl3:Yb3+ NCs with the hot-injection method and studied them using structural/optical characterization methods such as x-ray diffraction, scanning transmission electron microscopy, energy-dispersive x-ray spectroscopy, fluorescence lifetime and quantum yield measurements. We found that the hot-injection method is susceptible to the formation of colloidally stable Yb-rich reaction by-products. After separating these by-products from the NCs, NIR PLQY increased by a relative 46 %. Although the PLQY values recorded in this study are 4–7 times lower than in other studies, these findings may explain some discrepancies in photoluminescence efficiency reported with this material.
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
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