AlN和AlScN薄膜上生长FeCoSiB铁磁合金的软磁和微波性能

IF 1.1 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Meng Zhao;Xianfeng Liang;Yuxi Wang;Tao Wu;Jingen Wu;Jinghong Guo;Zhongqiang Hu;Ming Liu
{"title":"AlN和AlScN薄膜上生长FeCoSiB铁磁合金的软磁和微波性能","authors":"Meng Zhao;Xianfeng Liang;Yuxi Wang;Tao Wu;Jingen Wu;Jinghong Guo;Zhongqiang Hu;Ming Liu","doi":"10.1109/LMAG.2025.3535310","DOIUrl":null,"url":null,"abstract":"Thin-film magneto-electric composites based on aluminum nitride (AIN) and Sc-doped AlN exhibit great potential for applications in magneto-electric devices. In this letter, we report soft magnetism and microwave properties in FeCoSiB ferromagnetic alloys grown on AlN and AlScN thin films. According to the hysteresis loop, the coercive fields for FeCoSiB/AlN/Mo/Si and FeCoSiB/AlScN/Mo/Si are 43 and 107 Oe, respectively. The influence of interfacial state on magnetic damping is investigated by measuring the magnetic dynamic properties. Scanning electron microscope images show that AlScN film has a larger grain size and rougher surface than that of AlN. The effective magnetization and damping factors are obtained from the ferromagnetic resonance spectroscopy. The damping factor of the magneto-electric heterojunction on AlN/Mo/Si is an order of magnitude higher than that on Si, indicating the interfacial conditions of thin film stacks affect the magnetic dynamic properties. Our findings indicate that the growth quality of piezoelectric materials has a significant impact on magneto-electric films with low-loss tangents at radio-frequency (RF)/microwave frequencies. This work is of practical importance for developing future RF/microwave magneto-electric devices.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":"16 ","pages":"1-5"},"PeriodicalIF":1.1000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Soft Magnetism and Microwave Properties of FeCoSiB Ferromagnetic Alloys Grown on AlN and AlScN Thin Films\",\"authors\":\"Meng Zhao;Xianfeng Liang;Yuxi Wang;Tao Wu;Jingen Wu;Jinghong Guo;Zhongqiang Hu;Ming Liu\",\"doi\":\"10.1109/LMAG.2025.3535310\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin-film magneto-electric composites based on aluminum nitride (AIN) and Sc-doped AlN exhibit great potential for applications in magneto-electric devices. In this letter, we report soft magnetism and microwave properties in FeCoSiB ferromagnetic alloys grown on AlN and AlScN thin films. According to the hysteresis loop, the coercive fields for FeCoSiB/AlN/Mo/Si and FeCoSiB/AlScN/Mo/Si are 43 and 107 Oe, respectively. The influence of interfacial state on magnetic damping is investigated by measuring the magnetic dynamic properties. Scanning electron microscope images show that AlScN film has a larger grain size and rougher surface than that of AlN. The effective magnetization and damping factors are obtained from the ferromagnetic resonance spectroscopy. The damping factor of the magneto-electric heterojunction on AlN/Mo/Si is an order of magnitude higher than that on Si, indicating the interfacial conditions of thin film stacks affect the magnetic dynamic properties. Our findings indicate that the growth quality of piezoelectric materials has a significant impact on magneto-electric films with low-loss tangents at radio-frequency (RF)/microwave frequencies. This work is of practical importance for developing future RF/microwave magneto-electric devices.\",\"PeriodicalId\":13040,\"journal\":{\"name\":\"IEEE Magnetics Letters\",\"volume\":\"16 \",\"pages\":\"1-5\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2025-01-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Magnetics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10855503/\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10855503/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

氮化铝(AIN)和sc掺杂AlN薄膜磁电复合材料在磁电器件中具有巨大的应用潜力。在本文中,我们报道了生长在AlN和AlScN薄膜上的FeCoSiB铁磁合金的软磁和微波性能。根据磁滞回线,FeCoSiB/AlN/Mo/Si和FeCoSiB/AlScN/Mo/Si的矫顽力场分别为43 Oe和107 Oe。通过测量磁动态特性,研究了界面状态对磁阻尼的影响。扫描电镜图像显示,AlScN薄膜比AlN具有更大的晶粒尺寸和更粗糙的表面。利用铁磁共振谱法得到了有效磁化系数和阻尼系数。AlN/Mo/Si表面的磁电异质结阻尼系数比Si表面的高一个数量级,表明薄膜叠层的界面条件影响其磁动态性能。我们的研究结果表明,压电材料的生长质量对在射频/微波频率下具有低损耗切线的磁电薄膜有显著影响。这项工作对未来射频/微波磁电器件的开发具有重要的现实意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Soft Magnetism and Microwave Properties of FeCoSiB Ferromagnetic Alloys Grown on AlN and AlScN Thin Films
Thin-film magneto-electric composites based on aluminum nitride (AIN) and Sc-doped AlN exhibit great potential for applications in magneto-electric devices. In this letter, we report soft magnetism and microwave properties in FeCoSiB ferromagnetic alloys grown on AlN and AlScN thin films. According to the hysteresis loop, the coercive fields for FeCoSiB/AlN/Mo/Si and FeCoSiB/AlScN/Mo/Si are 43 and 107 Oe, respectively. The influence of interfacial state on magnetic damping is investigated by measuring the magnetic dynamic properties. Scanning electron microscope images show that AlScN film has a larger grain size and rougher surface than that of AlN. The effective magnetization and damping factors are obtained from the ferromagnetic resonance spectroscopy. The damping factor of the magneto-electric heterojunction on AlN/Mo/Si is an order of magnitude higher than that on Si, indicating the interfacial conditions of thin film stacks affect the magnetic dynamic properties. Our findings indicate that the growth quality of piezoelectric materials has a significant impact on magneto-electric films with low-loss tangents at radio-frequency (RF)/microwave frequencies. This work is of practical importance for developing future RF/microwave magneto-electric devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Magnetics Letters
IEEE Magnetics Letters PHYSICS, APPLIED-
CiteScore
2.40
自引率
0.00%
发文量
37
期刊介绍: IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信