Xun Li, Xi Wang, Xiaohui Xie, Quanzhi Sun, Songmin Zhou, Zhikai Gan, Liqi Zhu, Yanfeng Wei, Chun Lin
{"title":"通过优化吸收层载流子浓度抑制超长波长 p 对 n HgCdTe 红外探测器的暗电流","authors":"Xun Li, Xi Wang, Xiaohui Xie, Quanzhi Sun, Songmin Zhou, Zhikai Gan, Liqi Zhu, Yanfeng Wei, Chun Lin","doi":"10.1016/j.infrared.2025.105769","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, the very long-wavelength (VLW) p-on-n HgCdTe devices with different absorber layer carrier concentration are fabricated and their dark current density versus voltage (J-V) characteristics are analyzed. The results show that suppression tunneling current is of great significance for VLW device, and reducing absorber layer carrier concentration is an feasible method. The influences of carrier concentration on dark current density are discussed further, considering the dependence of minority carrier lifetime on carrier concentration. It is found that the tunneling current and generation-recombination current are the dominant dark current mechanism respectively when the absorber layer carrier concentration is above and below 1.0 × 10<sup>15</sup> cm<sup>−3</sup>. The experiment and simulation results indicate that the n-type absorber layer with carrier concentration below 1.0 × 10<sup>15</sup> cm<sup>−3</sup> and high Shockley-Read-Hall (SRH) lifetime is beneficial for the preparation of low dark current VLW p-on-n HgCdTe devices.</div></div>","PeriodicalId":13549,"journal":{"name":"Infrared Physics & Technology","volume":"147 ","pages":"Article 105769"},"PeriodicalIF":3.1000,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dark current suppression of very long-wavelength p-on-n HgCdTe infrared detectors via optimizing absorber layer carrier concentration\",\"authors\":\"Xun Li, Xi Wang, Xiaohui Xie, Quanzhi Sun, Songmin Zhou, Zhikai Gan, Liqi Zhu, Yanfeng Wei, Chun Lin\",\"doi\":\"10.1016/j.infrared.2025.105769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this study, the very long-wavelength (VLW) p-on-n HgCdTe devices with different absorber layer carrier concentration are fabricated and their dark current density versus voltage (J-V) characteristics are analyzed. The results show that suppression tunneling current is of great significance for VLW device, and reducing absorber layer carrier concentration is an feasible method. The influences of carrier concentration on dark current density are discussed further, considering the dependence of minority carrier lifetime on carrier concentration. It is found that the tunneling current and generation-recombination current are the dominant dark current mechanism respectively when the absorber layer carrier concentration is above and below 1.0 × 10<sup>15</sup> cm<sup>−3</sup>. The experiment and simulation results indicate that the n-type absorber layer with carrier concentration below 1.0 × 10<sup>15</sup> cm<sup>−3</sup> and high Shockley-Read-Hall (SRH) lifetime is beneficial for the preparation of low dark current VLW p-on-n HgCdTe devices.</div></div>\",\"PeriodicalId\":13549,\"journal\":{\"name\":\"Infrared Physics & Technology\",\"volume\":\"147 \",\"pages\":\"Article 105769\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared Physics & Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1350449525000623\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Physics & Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1350449525000623","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Dark current suppression of very long-wavelength p-on-n HgCdTe infrared detectors via optimizing absorber layer carrier concentration
In this study, the very long-wavelength (VLW) p-on-n HgCdTe devices with different absorber layer carrier concentration are fabricated and their dark current density versus voltage (J-V) characteristics are analyzed. The results show that suppression tunneling current is of great significance for VLW device, and reducing absorber layer carrier concentration is an feasible method. The influences of carrier concentration on dark current density are discussed further, considering the dependence of minority carrier lifetime on carrier concentration. It is found that the tunneling current and generation-recombination current are the dominant dark current mechanism respectively when the absorber layer carrier concentration is above and below 1.0 × 1015 cm−3. The experiment and simulation results indicate that the n-type absorber layer with carrier concentration below 1.0 × 1015 cm−3 and high Shockley-Read-Hall (SRH) lifetime is beneficial for the preparation of low dark current VLW p-on-n HgCdTe devices.
期刊介绍:
The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region.
Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine.
Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.