二氧化硅和纳米结构中Mostar型指数和熵测度的计算分析

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-01-15 DOI:10.1007/s12633-025-03221-x
Jiang-Hua Tang, Muhammad Kamran Siddiqui, Muhammad Yousaf Bhatti, Muhammad Younas, Shazia Manzoor, Muhammad Farhan Hanif
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引用次数: 0

摘要

本文介绍了应用于二氧化硅\((SiO_{2})\)和纳米结构的mostar型指数和熵测度的综合拓扑分析。为了表征\(SiO_{2}\)和其他纳米结构的复杂性和多样性,本研究着眼于mostar型指数的计算,一个独特的数学框架和熵度量。这项工作通过使用尖端的计算工具和算法,对这些材料中固有的原子排列和信息内容进行了彻底的研究。复杂分子结构的测量可以通过熵与图的关联来实现。文献中提出了各种各样的图熵。本研究引入新的图熵,利用键加性指标来评估网络和图的外围性。具体来说,我们计算了分子结构如\(SiO_{2}\)、\(C_{8}\)层结构和melem链纳米结构的Mostar型指数、Mostar熵、边Mostar熵和总Mostar熵。此外,用切法推导了这些熵的解析表达式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Computational Analysis of Mostar Type Indices and Entropy Measures in Silicon Dioxide and Nanostructures

This article presents a comprehensive topological analysis of Mostar-type indices and entropy measures applied to Silicon Dioxide \((SiO_{2})\) and nanostructures. To characterize the complexity and variety within \(SiO_{2}\) and other nanostructures, this research looks into the calculation of Mostar-type indices, a unique mathematical framework, and entropy metrics. This work presents a thorough investigation of the atomic arrangements and information content inherent in these materials by using cutting-edge computational tools and algorithms. The measurement of complex molecular structures can be achieved through the correlation of entropy with graphs. Various graph entropies have been proposed in the literature. This study introduces novel graph entropies that utilize bond additive indices to assess network and graph peripherality. Specifically, we calculated the Mostar type indices, Mostar entropy, edge Mostar entropy, and total Mostar entropy for molecular structures such as \(SiO_{2}\), \(C_{8}\) layer structure, and melem chain nanostructure. Moreover, analytical expressions for these entropies were derived using the cut method.

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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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