Cu-C84、Cu-Si84、Cu-CNT(9,0)和Cu-SiNT(9,0)催化剂催化SO2加氢脱硫制H2S

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-01-09 DOI:10.1007/s12633-024-03210-6
Farag M. A. Altalbawy, Baraa Mohammed Yaseen, Ali Fawzi Al-Hussainy, Roopashree R, Bharti Kumari, M. Ravi Kumar, Sharnjeet Kaur, Heyder H. A. Alanvari, Hadil Hussain Hamza, Wael Dheaa Kadhim Al Ghezy, Fadhel Faez Sead
{"title":"Cu-C84、Cu-Si84、Cu-CNT(9,0)和Cu-SiNT(9,0)催化剂催化SO2加氢脱硫制H2S","authors":"Farag M. A. Altalbawy,&nbsp;Baraa Mohammed Yaseen,&nbsp;Ali Fawzi Al-Hussainy,&nbsp;Roopashree R,&nbsp;Bharti Kumari,&nbsp;M. Ravi Kumar,&nbsp;Sharnjeet Kaur,&nbsp;Heyder H. A. Alanvari,&nbsp;Hadil Hussain Hamza,&nbsp;Wael Dheaa Kadhim Al Ghezy,&nbsp;Fadhel Faez Sead","doi":"10.1007/s12633-024-03210-6","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, the potential of nanocages (Cu-C<sub>84</sub> and Cu-Si<sub>84</sub>) and nanotubes (Cu-CNT(9, 0) and Cu-SiNT(9, 0)) for SO<sub>2</sub> hydro-desulfurization to produce the H<sub>2</sub>S are examined via acceptable mechanisms. The ∆E<sub>adoption</sub> and ∆E<sub>formation</sub> of Cu-C<sub>84</sub>, Cu-Si<sub>84</sub>, Cu-doped C and Si nanotubes (9, 0) are acceptable values to confirm the stability of nanostructures. The ∆E<sub>adsorption</sub> of SO<sub>2</sub>, SO, S, O, SH, OH, H<sub>2</sub>S and H<sub>2</sub>O on Cu-C<sub>84</sub> are -4.38, -3.75, -2.68, -3.03, -0.14, -0.06, -0.21 and -0.10 eV, respectively. The H<sub>2</sub>O and H<sub>2</sub>S molecules are desorbed from nanostructures, physically. The ∆E<sub>formation</sub> of Cu-C<sub>84</sub>, Cu-Si<sub>84</sub>, Cu-doped C and Si nanotubes (9, 0) are -2.91, -3.06, -3.39 and -3.46 eV, respectively. Results indicated that the hydrogenation of S* has more negative ΔG<sub>reaction</sub> than hydrogenation of O* on Cu-C<sub>84</sub>, Cu-Si<sub>84</sub>, Cu-doped C and Si nanotubes (9, 0), significantly. The hydrogenation of S* has lower E<sub>activation</sub> than hydrogenation of O* on surfaces of catalysts. The ΔG<sub>reaction</sub> of S → SH → H<sub>2</sub>S reaction on Cu-Si<sub>84</sub> and Cu-doped Si nanotube (9, 0) are more negative than Cu-C<sub>84</sub> and Cu-doped C nanotube (9, 0). Finally, the Cu-doped C and Si nanotubes (9, 0) as effective nano-catalysts for SO<sub>2</sub> hydro-desulfurization to H<sub>2</sub>S production are proposed with high performance.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 3","pages":"563 - 569"},"PeriodicalIF":2.8000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SO2 Hydro-Desulfurization to H2S Production Through the Cu-C84, Cu-Si84, Cu-CNT(9, 0) and Cu-SiNT(9, 0) Catalysts\",\"authors\":\"Farag M. A. Altalbawy,&nbsp;Baraa Mohammed Yaseen,&nbsp;Ali Fawzi Al-Hussainy,&nbsp;Roopashree R,&nbsp;Bharti Kumari,&nbsp;M. Ravi Kumar,&nbsp;Sharnjeet Kaur,&nbsp;Heyder H. A. Alanvari,&nbsp;Hadil Hussain Hamza,&nbsp;Wael Dheaa Kadhim Al Ghezy,&nbsp;Fadhel Faez Sead\",\"doi\":\"10.1007/s12633-024-03210-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, the potential of nanocages (Cu-C<sub>84</sub> and Cu-Si<sub>84</sub>) and nanotubes (Cu-CNT(9, 0) and Cu-SiNT(9, 0)) for SO<sub>2</sub> hydro-desulfurization to produce the H<sub>2</sub>S are examined via acceptable mechanisms. The ∆E<sub>adoption</sub> and ∆E<sub>formation</sub> of Cu-C<sub>84</sub>, Cu-Si<sub>84</sub>, Cu-doped C and Si nanotubes (9, 0) are acceptable values to confirm the stability of nanostructures. The ∆E<sub>adsorption</sub> of SO<sub>2</sub>, SO, S, O, SH, OH, H<sub>2</sub>S and H<sub>2</sub>O on Cu-C<sub>84</sub> are -4.38, -3.75, -2.68, -3.03, -0.14, -0.06, -0.21 and -0.10 eV, respectively. The H<sub>2</sub>O and H<sub>2</sub>S molecules are desorbed from nanostructures, physically. The ∆E<sub>formation</sub> of Cu-C<sub>84</sub>, Cu-Si<sub>84</sub>, Cu-doped C and Si nanotubes (9, 0) are -2.91, -3.06, -3.39 and -3.46 eV, respectively. Results indicated that the hydrogenation of S* has more negative ΔG<sub>reaction</sub> than hydrogenation of O* on Cu-C<sub>84</sub>, Cu-Si<sub>84</sub>, Cu-doped C and Si nanotubes (9, 0), significantly. The hydrogenation of S* has lower E<sub>activation</sub> than hydrogenation of O* on surfaces of catalysts. The ΔG<sub>reaction</sub> of S → SH → H<sub>2</sub>S reaction on Cu-Si<sub>84</sub> and Cu-doped Si nanotube (9, 0) are more negative than Cu-C<sub>84</sub> and Cu-doped C nanotube (9, 0). Finally, the Cu-doped C and Si nanotubes (9, 0) as effective nano-catalysts for SO<sub>2</sub> hydro-desulfurization to H<sub>2</sub>S production are proposed with high performance.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 3\",\"pages\":\"563 - 569\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03210-6\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03210-6","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

在这项工作中,通过可接受的机制,研究了纳米笼(Cu-C84和Cu-Si84)和纳米管(Cu-CNT(9,0)和Cu-SiNT(9,0))用于二氧化硫加氢脱硫产生H2S的潜力。Cu-C84、Cu-Si84、cu掺杂C和Si纳米管(9,0)的∆Eadoption和∆Eformation是可以接受的值,可以证实纳米结构的稳定性。Cu-C84对SO2、SO、S、O、SH、OH、H2S和H2O的∆吸附值分别为-4.38、-3.75、-2.68、-3.03、-0.14、-0.06、-0.21和-0.10 eV。H2O和H2S分子从纳米结构中被物理解吸。Cu-C84、Cu-Si84、cu掺杂C和Si纳米管(9、0)的∆Eformation分别为-2.91、-3.06、-3.39和-3.46 eV。结果表明,在Cu-C84、Cu-Si84、cu掺杂C和Si纳米管上,S*加氢的负ΔGreaction比O*加氢的负ΔGreaction多(9,0)。催化剂表面S*的加氢活性低于O*的加氢活性。在Cu-Si84和cu掺杂Si纳米管(9,0)上S→SH→H2S反应的负极性ΔGreaction大于Cu-C84和cu掺杂C纳米管(9,0)。最后,提出了cu掺杂C和Si纳米管(9,0)作为SO2加氢脱硫制H2S的高效纳米催化剂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SO2 Hydro-Desulfurization to H2S Production Through the Cu-C84, Cu-Si84, Cu-CNT(9, 0) and Cu-SiNT(9, 0) Catalysts

In this work, the potential of nanocages (Cu-C84 and Cu-Si84) and nanotubes (Cu-CNT(9, 0) and Cu-SiNT(9, 0)) for SO2 hydro-desulfurization to produce the H2S are examined via acceptable mechanisms. The ∆Eadoption and ∆Eformation of Cu-C84, Cu-Si84, Cu-doped C and Si nanotubes (9, 0) are acceptable values to confirm the stability of nanostructures. The ∆Eadsorption of SO2, SO, S, O, SH, OH, H2S and H2O on Cu-C84 are -4.38, -3.75, -2.68, -3.03, -0.14, -0.06, -0.21 and -0.10 eV, respectively. The H2O and H2S molecules are desorbed from nanostructures, physically. The ∆Eformation of Cu-C84, Cu-Si84, Cu-doped C and Si nanotubes (9, 0) are -2.91, -3.06, -3.39 and -3.46 eV, respectively. Results indicated that the hydrogenation of S* has more negative ΔGreaction than hydrogenation of O* on Cu-C84, Cu-Si84, Cu-doped C and Si nanotubes (9, 0), significantly. The hydrogenation of S* has lower Eactivation than hydrogenation of O* on surfaces of catalysts. The ΔGreaction of S → SH → H2S reaction on Cu-Si84 and Cu-doped Si nanotube (9, 0) are more negative than Cu-C84 and Cu-doped C nanotube (9, 0). Finally, the Cu-doped C and Si nanotubes (9, 0) as effective nano-catalysts for SO2 hydro-desulfurization to H2S production are proposed with high performance.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信