An Accurate SiC MOSFET Transient Modeling Method for the FPGA-Based Real-Time Simulation of Power Electronic Converters

This article proposes a silicon carbide (SiC) MOSFET transient model on the field programmable gate array (FPGA), which is suitable for the real-time simulation (RTS) of power electronic converters. The model describes the transient process with state equations, which is segmented by the time-scale, and achieves accurate simulation results with small time-step. Compared with the existing research that simplifies SiC MOSFET model in the RTS implementation process, the proposed modeling method not only considers the hard-switching process caused by insufficient deadtime, and the special switching mode that the channel turn-off precedes the antiparallel diode turn-on in opposite device, but also fits the nonlinear characteristics of the SiC MOSFET through look-up tables (LUTs). In addtion, the parallel solution structure of the FPGA-based RTS model is completed through hardware optimization design scheme. Combined with circuit decoupling technology, the model can be solved by the Backward Euler (BE) discretization method with time-step of 10 ns. Subsequently, the effectiveness and accuracy of the modeling method are validated by the simulation and hardware experiments.