范德华反铁磁体/铁磁体CrCl3/Fe3GeTe2/CrCl3异质结构中的异常磁化

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Jianshu Xue, Cuiying Hu, Runqiu Tian, Yitong Sun, Jinwei Rao, Yilin Wang, Shishen Yan, Lihui Bai and Bingbing Lyu*, 
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引用次数: 0

摘要

操纵和设计二维(2D)范德华材料之间的界面是实现技术显著效果和剪裁材料特性的基本方法。二维范德华磁异质结构中所表现出的交换偏压效应,由于其有趣的物理性质和良好的实际应用前景,在自旋电子学研究领域引起了极大的关注。本文首次构建了CrCl3/Fe3GeTe2/CrCl3异质结构,并采用异常霍尔方法对其独特特性进行了精确测量。有趣的是,在异常霍尔效应曲线中观察到明显的双位移磁滞回线,这归因于CrCl3/Fe3GeTe2界面诱导Fe3GeTe2层内出现多个畴。与纯Fe3GeTe2的少层结构相比,CrCl3/Fe3GeTe2/CrCl3异质结构表现出交换偏置效应。随着温度的升高,交换偏置场的值逐渐减小,最终在11k时消失,接近CrCl3的nsamel温度。同时,滞回线宽度减小,在150k以上消失。这些结果表明,钉住效应和交换偏置效应不是同时存在的,钉住效应的温度范围比交换偏置效应的温度范围宽。我们的发现强调了反铁磁-铁磁耦合界面作为操纵磁性的强大手段的潜力,这对先进的自旋电子器件设计和对磁相互作用的基本理解都有意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Anomalous Magnetization in a van der Waals Antiferromagnet/Ferromagnet CrCl3/Fe3GeTe2/CrCl3 Heterostructure

Anomalous Magnetization in a van der Waals Antiferromagnet/Ferromagnet CrCl3/Fe3GeTe2/CrCl3 Heterostructure

Manipulating and designing the interfaces between two-dimensional (2D) van der Waals materials serves as a fundamental approach for achieving technologically significant effects and tailoring material characteristics. The exchange bias effect exhibited in 2D van der Waals magnetic heterostructures has garnered significant attention in the realm of spintronics research owing to its intriguing physics and promising prospects for practical applications. Herein, we have, for the first time, constructed the CrCl3/Fe3GeTe2/CrCl3 heterostructure and employed the anomalous Hall method to precisely measure its unique characteristics. Interestingly, distinct double-shifted hysteresis loops observed in the anomalous Hall effect curve are attributed to the emergence of multiple domains within the Fe3GeTe2 layer induced by the CrCl3/Fe3GeTe2 interfaces. In contrast to the pure Fe3GeTe2 few-layer structures, the CrCl3/Fe3GeTe2/CrCl3 heterostructure demonstrates the presence of an exchange bias effect. As the temperature increases, the values of the exchange bias field decrease and ultimately vanish at 11 K, near the Néel temperature of CrCl3. Concurrently, the width of the hysteresis loop diminishes and disappears above 150 K. These findings suggest that the pinning effect and exchange bias effect are not present simultaneously, and the pinning effect has a temperature range wider than that of the exchange bias effect. Our findings underscore the potential of antiferromagnet–ferromagnet coupling interfaces as a powerful means for manipulating magnetic properties, with implications for both advanced spintronic device design and fundamental understanding of magnetic interactions.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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