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IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-02-23 DOI:10.1007/s10825-025-02289-3

Alamgeer, Muhammad Quddamah Khokhar, Hasnain Yousuf, Rafi Ur Rahman, Polgampola Chamani Madara, Mengmeng Chu, Muhammad Tahir, Sangheon Park, Junsin Yi

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引用次数: 0

摘要

在这篇文章中，我们使用 Quokka3 仿真模拟了互嵌背触点（IBC）太阳能电池，重点介绍了可显著提高电池性能的前后钝化和薄层电阻的详细方法。在微调重组电流密度 J0（fA/cm2）后，抗反射涂层（ARC）和前钝化层决定了这些界面上的重组损耗，因此对电池效率起着至关重要的作用。后部钝化层是前部钝化层的补充，可减轻重组，优化硅晶片内的光捕获。当 100 Ω/Sq 的发射极比例约为 40% 时，后部硼片电阻显示出增强的 Voc、Jsc、FF 和 η，分别为 719.2 mV、41.66 mA/cm2、84.71% 和 25.2%。这些结果表明了 J0 和后部硼面积的变化是如何受正面和背面钝化的影响而影响 IBC 电池的 FF 和 η 的。此外，晶体硅（c-Si）体寿命、晶片电阻率和后硼片电阻（Rsh）的变化也为提高电池的整体性能提供了途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improved passivation and antireflection techniques for higher-efficiency Interdigitated Back Contact (IBC) solar cells

In this article, we simulated the Interdigitated Back Contact (IBC) solar cell using Quokka3 simulation, highlighting a detailed approach to front and back passivation and sheet resistance that significantly enhances cell performance. The antireflective coating (ARC) and the front passivation layer, after fine-tuning variation of recombination current density J₀ (fA/cm²), dictate the recombination losses at these interfaces, therefore playing a critical role on cell efficiency. The rear passivation layer complements the front in mitigating recombination to optimize light capture within the silicon wafer. When the emitter fraction is approximately 40% at 100 Ω/Sq, the rear boron sheet resistance showed the enhanced V_oc, J_sc, FF, and η as 719.2 mV, 41.66 mA/cm², 84.71%, and 25.2%. These results demonstrate how J₀ and rear boron area variability, influenced by both front and back passivation, affects the FF and η of the IBC cell. Furthermore, variations in the bulk lifetime of crystalline silicon (c-Si), resistivity of the wafer, and rear boron sheet resistance (R_sh) offer pathways to improve overall cell performance.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.