高能重离子辐照增强晶体硅热电性能

IF 6.9 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Applied Surface Science Pub Date : 2025-02-21 DOI:10.1016/j.apsusc.2025.162757

Kelin Zhu , Aoran Fan , Jianguang Wang , Zhe Chen , Yonghui Chen , Jie liu , Guoan Cheng , Xiaoling Wu , Ruiting Zheng

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引用次数: 0

摘要

本研究介绍了通过高能重离子辐照单晶硅产生的潜离子轨迹。研究了沿离子轨迹的极弱局部应变场对声子和载流子传输的重大影响。热电性能可通过改变辐照通量来调节。在 4.4 × 1011 cm-2 的高能量下用 Ta 离子辐照后，与原始硅相比，热导率显著降低了 44.90%，塞贝克系数上升了 11.01%，电阻率略微增加了 5.58%，室温下的无量纲优越性（zT）显著改变了 112%。这使人们对粒子轨迹区域的物理性质有了新的认识，并为优化硅的热电特性提供了一种新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Enhancing thermoelectric properties of crystalline silicon through high energy heavy ion irradiation

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Enhancing thermoelectric properties of crystalline silicon through high energy heavy ion irradiation

This study introduces latent ion tracks through high-energy heavy ion irradiation on monocrystalline Si. The significant impact of extremely weak localized strain fields along the ion trajectory on phonon and carrier transport was investigated. The thermoelectric properties are modulated by varying the irradiation fluences. After high-energy irradiation with Ta ions at a fluence of 4.4 × 10¹¹ cm⁻², the thermal conductivity significantly decreases by 44.90 %, the Seebeck coefficient rises by 11.01 %, the electric resistivity increases slightly by 5.58 %, and the dimensionless figure of merit (zT) at room temperature changes significantly by 112 % compared to that of the original Si. The result offers new insights into the physical properties of particle track regions, and presents a novel approach for optimizing the thermoelectric properties of Si.

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来源期刊

Applied Surface Science 工程技术-材料科学：膜

CiteScore

12.50

自引率

7.50%

发文量

3393

审稿时长

67 days

期刊介绍： Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.