Sankaranarayanan-Ramasamy法生长的用于压电和二阶生成的体积大小的二(3-氨基酰基吡啶-1-ium)亚磷酸酯一水(SR-BCPP)单晶

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
P. Vivek
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引用次数: 0

摘要

利用S-R技术成功制备了(SR-BCPP)块状单晶。SR-BCPP属于非中心对称空间群。SR-BCPP的光学透明度提高了7%。计算SR-BCPP的LDT值为0.4487 GW/cm。SR-BCPP硬度随载荷增加而升高,可达130 g。SR-BCPP的SHG疗效是常用KDP的4.2倍。SR-BCPP的压电电荷系数为8.1 pC/N。与常规生产的BCPP相比,UV透射率、折射率、双折射、LDT、显微硬度、压电和SHG等特性都得到了增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sankaranarayanan–Ramasamy method-grown bulk-sized bis(3-carbamoylpyridin-1-ium) phosphite monohydrate (SR-BCPP) single crystal for piezoelectric and second-order generating applications

Bulk-sized single crystals of (SR-BCPP) were successfully produced using the S–R technique. SR-BCPP belongs to the noncentrosymmetric space group. SR-BCPP’s optical transparency enhanced by 7%. The LDT of SR-BCPP was calculated and the value was 0.4487 GW/cm. SR-BCPP hardness rises with increasing load upto 130 g. The SHG efficacy of SR-BCPP was 4.2 times more than that of the frequently used KDP. The piezoelectric charge coefficient for the SR-BCPP was discovered to be 8.1 pC/N. UV transmittance, refractive index, birefringence, LDT, microhardness, piezoelectric, and SHG all characteristics were enhanced as compared to conventionally produced BCPP.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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