c波段单光子产生的InAs/InGaAs量子点异质结构

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2025-02-21 DOI:10.1134/S0021364024604743

S. V. Sorokin, G. V. Klimko, I. V. Sedova, O. E. Lakuntsova, A. I. Galimov, Yu. M. Serov, A. I. Veretennikov, L. A. Snigirev, A. A. Toropov

{"title":"c波段单光子产生的InAs/InGaAs量子点异质结构","authors":"S. V. Sorokin, G. V. Klimko, I. V. Sedova, O. E. Lakuntsova, A. I. Galimov, Yu. M. Serov, A. I. Veretennikov, L. A. Snigirev, A. A. Toropov","doi":"10.1134/S0021364024604743","DOIUrl":null,"url":null,"abstract":"Heterostructures with InAs/InGaAs quantum dots and InxGa1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the InxGa1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al0.9Ga0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.","PeriodicalId":604,"journal":{"name":"JETP Letters","volume":"121 1","pages":"35 - 40"},"PeriodicalIF":1.4000,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1134/S0021364024604743.pdf","citationCount":"0","resultStr":"{\"title\":\"Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range\",\"authors\":\"S. V. Sorokin, G. V. Klimko, I. V. Sedova, O. E. Lakuntsova, A. I. Galimov, Yu. M. Serov, A. I. Veretennikov, L. A. Snigirev, A. A. Toropov\",\"doi\":\"10.1134/S0021364024604743\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Heterostructures with InAs/InGaAs quantum dots and InxGa1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the InxGa1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al0.9Ga0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.\",\"PeriodicalId\":604,\"journal\":{\"name\":\"JETP Letters\",\"volume\":\"121 1\",\"pages\":\"35 - 40\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1134/S0021364024604743.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"JETP Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S0021364024604743\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"JETP Letters","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S0021364024604743","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

采用分子束外延技术制备了具有InAs/InGaAs量子点和InxGa1-xAs /GaAs（001）变质缓冲层的异质结构。该结构设计用于在电信c波段波长范围内获得单光子发射。研究了降低InxGa1-xAs梯度层厚度以形成空腔长度小至两个波长的高效微腔结构的可能性。在Al0.9Ga0.1As/GaAs分布式Bragg反射器上生长了具有变质缓冲层的结构，并用透射电镜和光致发光光谱对其进行了表征。

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Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range

Heterostructures with InAs/InGaAs quantum dots and In_xGa_1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the In_xGa_1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al_0.9Ga_0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.