Xiang Du, Min-Han Mi, Peng-Fei Wang, Mao-Teng Lu, Yu-Wei Zhou, Can Gong, Xiao-Ping Ouyang, Xiao-Hua Ma, Yue Hao
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An AlN/AlxGa1-xN/GaN graded channel HEMT with enhanced power and linearity performance
In this work, an AlN/AlxGa1-xN/GaN graded channel HEMT (AlN. GC HEMT) with enhanced power and linearity performance has been proposed. With the adoption of a strong-polarized AlN barrier and a graded AlxGa1-xN channel, a current density of 1806 mA/mm and a transconductance (Gm) gate voltage swing (GVS-Gm) of 7 V were gained. At 3.6 GHz load pull measurements with a drain voltage (VDS) of 8 V, the AlN. GC HEMT exhibited a maximum output power density (Pout) of 2.2 W/mm. Two-tone intermodulation distortion measurement further revealed an output third-order intercept point (OIP3) of 35.5 dBm and a corresponding linearity figure of merit (OIP3/PDC) of 11.2 dB. The improved performance can be attributed to the hybrid 2DEG and 3DEG distribution in the channel, where the high density 2DEG contributes to a large output capacity, and the smooth 3DEG facilitates a sustained and stable charge accumulation with bias variation. These results indicate the potential of AlN. GC HEMT in 5G applications that target high power density and high linearity.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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