Hong Yan, Zhaoting Zhang, Zhi Shiuh Lim, Shengwei Zeng, Jijun Yun, Shuanhu Wang, Yupu Zhang, Kexin Jin
{"title":"压电型0.7 pbg1 / 3nb2 / 3o3 - 0.3 pbtio3衬底上LaAlO3/TiO2异质界面上二维电子气的新特性","authors":"Hong Yan, Zhaoting Zhang, Zhi Shiuh Lim, Shengwei Zeng, Jijun Yun, Shuanhu Wang, Yupu Zhang, Kexin Jin","doi":"10.1063/5.0256731","DOIUrl":null,"url":null,"abstract":"Understanding and controlling the emergent electronic transport properties at interfaces of oxides has been a major issue in condensed matter physics for both fundamental science and technological applications. In this work, we report a two-dimensional electron gas (2DEG) formed at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 (PMN–PT) substrates, where the conductive layer is about 2.48 nm. The Kondo behaviors below 50 K are observed depending on TiO2 thickness. In addition, unique negative magnetoresistance (MR) and asymmetry planar angular MR imply the presence of Rashba spin–orbit interactions. Furthermore, the electric-field-controlled hysteresis loop-like resistance changes were obtained in a-LAO/TiO2/PMN–PT heterostructures. A resistance enhancement of ∼8% at room temperature was achieved at an electric field of −1 kV/cm, which indicates that such 2DEG is rather sensitive to the strain in the TiO2 layer. Thus, this work creates a path to exploring the physics of low-dimensional oxide electronics and nonvolatile memory and logic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Emerging properties of the two-dimensional electron gas at LaAlO3/TiO2 heterointerfaces on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 substrates\",\"authors\":\"Hong Yan, Zhaoting Zhang, Zhi Shiuh Lim, Shengwei Zeng, Jijun Yun, Shuanhu Wang, Yupu Zhang, Kexin Jin\",\"doi\":\"10.1063/5.0256731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Understanding and controlling the emergent electronic transport properties at interfaces of oxides has been a major issue in condensed matter physics for both fundamental science and technological applications. In this work, we report a two-dimensional electron gas (2DEG) formed at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 (PMN–PT) substrates, where the conductive layer is about 2.48 nm. The Kondo behaviors below 50 K are observed depending on TiO2 thickness. In addition, unique negative magnetoresistance (MR) and asymmetry planar angular MR imply the presence of Rashba spin–orbit interactions. Furthermore, the electric-field-controlled hysteresis loop-like resistance changes were obtained in a-LAO/TiO2/PMN–PT heterostructures. A resistance enhancement of ∼8% at room temperature was achieved at an electric field of −1 kV/cm, which indicates that such 2DEG is rather sensitive to the strain in the TiO2 layer. Thus, this work creates a path to exploring the physics of low-dimensional oxide electronics and nonvolatile memory and logic devices.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"31 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-02-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0256731\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0256731","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Emerging properties of the two-dimensional electron gas at LaAlO3/TiO2 heterointerfaces on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 substrates
Understanding and controlling the emergent electronic transport properties at interfaces of oxides has been a major issue in condensed matter physics for both fundamental science and technological applications. In this work, we report a two-dimensional electron gas (2DEG) formed at the interfaces of amorphous-LaAlO3/TiO2 (a-LAO/TiO2) thin film heterostructures on piezoelectric 0.7PbMg1/3Nb2/3O3–0.3PbTiO3 (PMN–PT) substrates, where the conductive layer is about 2.48 nm. The Kondo behaviors below 50 K are observed depending on TiO2 thickness. In addition, unique negative magnetoresistance (MR) and asymmetry planar angular MR imply the presence of Rashba spin–orbit interactions. Furthermore, the electric-field-controlled hysteresis loop-like resistance changes were obtained in a-LAO/TiO2/PMN–PT heterostructures. A resistance enhancement of ∼8% at room temperature was achieved at an electric field of −1 kV/cm, which indicates that such 2DEG is rather sensitive to the strain in the TiO2 layer. Thus, this work creates a path to exploring the physics of low-dimensional oxide electronics and nonvolatile memory and logic devices.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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