基于掺氮半导体铁电体的氧化镍场效应晶体管用于超低电压开关（1 μV）、低亚阈值摆幅和存储器。

IF 2.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanotechnology Pub Date : 2025-02-26 DOI:10.1088/1361-6528/adb756

S Vulpe, M Dragoman, M Aldrigo, F Nastase, D Mladenovic, O Ligor, D Dragoman

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引用次数: 0

摘要

基于氮掺杂镍氧化物（NiON）半导体铁电材料的单场效应晶体管（FET）在栅极电压仅为1 μV和亚阈值摆幅（SS）为55 mV/ 10年的情况下具有超低电压开关。同样的场效应管充当漏极和地之间的铁电容性非易失性存储器。所有这些特征都可以在基于NiON生长在氧化铝（Al2O3）薄层上的场效应管中获得，该层沉积在掺杂硅（Si）晶片上。一年后，我们在没有任何热处理或其他程序唤醒铁电性的情况下，在我们的设备中恢复了相同的值。。

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Field-effect transistors based on nickel oxide doped with nitrogen semiconductor ferroelectrics for ultralow voltage switch (1μV), low subthreshold swing and memory.

A single field-effect transistor (FET) based on nitrogen doped-nickel oxide (NiON) semiconductor ferroelectric shows an ultralow voltage switch at a gate voltage value of just 1μV and a subthreshold swing (SS) of 55 mV/decade. The same FET acts as a ferroelectric capacitive non-volatile memory between the drain and the ground. All these features are retrieved in a FET based on NiON grown on a thin layer of aluminum oxide (Al₂O₃), which was deposited on a doped silicon (Si) wafer. After 1 year, we retrieved the same values in our devices without any thermal annealing or other procedures to wake up the ferroelectricity.

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.