SiC放电等离子烧结:TiC添加剂的影响

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY
A. Sh. Asvarov, A. K. Akhmedov, P. L. Podkur, V. M. Kanevsky
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引用次数: 0

摘要

研究了放电等离子烧结(SPS)制备的纯SiC、纯TiC陶瓷以及SiC - TiC复合陶瓷的压实动力学、相组成和力学特性。结果表明:在一定温度和烧结时间范围内(1800≤TSPS≤2000℃,0 min≤TSPS≤10 min),在一定压力下(PSPS = 45 MPa),烧结陶瓷的相对密度随温度和烧结时间的增加而增大,SiC、TiC和SiC + TiC(10 wt %)的相对密度分别达到计算值的88%、99.9%和96.2。结果表明,在SiC-TiC体系中,复合陶瓷的烧结是通过二元碳化物中间相的形成和随后的高温分解来实现的。结果表明,SiC - TiC复合材料的显微硬度是SiC相(HV = 2948±238 N/mm2)和TiC相(HV = 2465±256 N/mm2)硬度的相加值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Spark Plasma Sintering of SiC: Influence of TiC Additive

Spark Plasma Sintering of SiC: Influence of TiC Additive

The compaction kinetics, phase composition and mechanical characteristics of pure SiC and pure TiC ceramics, as well as SiC–TiC composite ceramics, obtained by spark plasma sintering (SPS), were studied depending on the component content and SPS-modes. It was found that at a fixed pressing pressure (PSPS = 45 MPa) in a given range of temperatures and sintering times (1800 ≤ TSPS ≤ 2000°C and 0 min ≤ tSPS ≤ 10 min), the relative density of sintered ceramics increases with increasing temperature and sintering time and reaches maximum values of 88, 99.9, and 96.2 of the calculated value for SiC, TiC, and SiC + TiC(10 wt %), respectively. It is shown that sintering of composite ceramics in the SiC–TiC system occurs through the formation and subsequent high-temperature decomposition of intermediate phases of binary carbides. It is demonstrated that the microhardness of SiC–TiC composite samples is determined as an additive value between the hardnesses of the included phases SiC (HV = 2948 ± 238 N/mm2) and TiC (HV = 2465 ± 256 N/mm2).

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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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