热蒸发法制备硅基铋纳米结构

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY
G. N. Kozhemyakin, S. A. Kiiko, A. V. Kiiko, V. V. Artemov, I. S. Volchkov
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引用次数: 0

摘要

通过在Ar中热蒸发10 ~ 20 s,在Si(100)衬底上获得了低维铋结构。利用计算机对电子扫描电镜图像进行处理,确定了铋纳米晶和微晶的尺寸和分布密度。纳米晶密度比微晶密度大260倍。随着纳米晶尺寸的增大,纳米晶密度随沉积时间的延长而减小2倍。x射线衍射分析表明,在Bi纳米晶和Si衬底表面存在氧化层。与在玻碳上沉积相比,在硅衬底上沉积的铋纳米晶体尺寸减小,密度增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Bi Nanostructures Obtained on Si Substrates by Thermal Evaporation

Bi Nanostructures Obtained on Si Substrates by Thermal Evaporation

Low dimension Bi structures were obtained on Si(100) substrates by thermal evaporation in Ar at 10‒20 s deposition time. The sizes and distribution density of Bi nano- and microcrystals were determined by computer processing of electron SEM-images. The nanocrystal density was larger than the microcrystal density by a factor of 260. The decrease of the nanocrystal density by a factor of 2 with the increase of their sizes was observed with the increase up to 20 s deposition time. X-ray diffraction analysis has revealed oxide layers on Bi nanocrystals and the Si substrate surface. The decrease of Bi nanocrystals sizes and the increase of their density on the Si substrates as compared of deposition on glassy carbon substrates was established.

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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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