IF 2.3 4区 材料科学 Q2 MATERIALS SCIENCE, CERAMICS
R. S. Gupta, Sachin Pandey, A. Ghosh, S. K. Sahoo, A. Rahaman, U. K. Goutam, S. Pandey, V. R. Singh
{"title":"The effects of substrates on the structural, morphological, magnetic and electronic properties of V2O5 thin films","authors":"R. S. Gupta,&nbsp;Sachin Pandey,&nbsp;A. Ghosh,&nbsp;S. K. Sahoo,&nbsp;A. Rahaman,&nbsp;U. K. Goutam,&nbsp;S. Pandey,&nbsp;V. R. Singh","doi":"10.1007/s10971-025-06666-z","DOIUrl":null,"url":null,"abstract":"<div><p>This study highlights the influence of various substrates on the structural integrity, phase purity, morphology, composition, magnetic properties, and electronic behavior of V<sub>2</sub>O<sub>5</sub> thin films synthesized through chemical solution methods on Si (111), ITO-coated glass, and glass substrates. The amorphous and smooth surfaces of the films were found on glass substrates, while those on ITO-coated glass and Si (111) substrates displayed a polycrystalline nature, with crystallinity increasing from ITO-coated glass to Si. Atomic force microscopy (AFM) confirmed the RMS roughness of the films, and morphology was conducted using high-resolution scanning electron microscopy (HR-SEM) and also energy-dispersive spectroscopy (EDS) mapping for elemental characterization. To know the functional groups present in the samples, Fourier-transform infrared (FT-IR) spectroscopy was employed. The band gap, measured by UV-Vis spectroscopy, ranged from 0.79 ± 0.01 to 0.9 ± 0.01 eV. The bulk magnetization measurements suggest that it exhibits ferromagnetic (FM) behavior with a saturation magnetization of 0.0–0.5 µB/cc. Core-level spectroscopy revealed that vanadium exists in a mixed oxidation state of 5+ and 4+. Findings from XPS, HR-SEM, and UV-Vis measurements confirm oxygen vacancies have a significant role in reducing the band gap and enhancing FM-like behavior in V<sub>2</sub>O<sub>5</sub>/Si films, which are also influenced by the films’ crystallinity and morphology. These results could pay great attention to the development of spintronic devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":664,"journal":{"name":"Journal of Sol-Gel Science and Technology","volume":"113 3","pages":"837 - 844"},"PeriodicalIF":2.3000,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Sol-Gel Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10971-025-06666-z","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 0

摘要

本研究强调了不同基底对通过化学溶液法在硅 (111)、ITO 涂层玻璃和玻璃基底上合成的 V2O5 薄膜的结构完整性、相纯度、形貌、成分、磁性能和电子行为的影响。玻璃基底上的薄膜表面无定形且光滑,而 ITO 涂层玻璃和 Si (111) 基底上的薄膜则呈现多晶性质,从 ITO 涂层玻璃到 Si 的结晶度不断增加。原子力显微镜(AFM)证实了薄膜的均方根粗糙度,使用高分辨率扫描电子显微镜(HR-SEM)和能量色散光谱(EDS)绘制元素表征图进行了形貌分析。为了了解样品中存在的官能团,还使用了傅立叶变换红外光谱(FT-IR)。紫外可见光谱法测量的带隙范围为 0.79 ± 0.01 至 0.9 ± 0.01 eV。体磁化测量结果表明,它具有铁磁(FM)特性,饱和磁化率为 0.0-0.5 µB/cc。芯级光谱显示,钒以 5+ 和 4+ 混合氧化态存在。XPS、HR-SEM 和 UV-Vis 测量结果证实,氧空位在减小 V2O5/Si 薄膜带隙和增强类调频行为方面起着重要作用,而这些作用还受到薄膜结晶度和形貌的影响。这些结果对开发自旋电子器件具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effects of substrates on the structural, morphological, magnetic and electronic properties of V2O5 thin films

This study highlights the influence of various substrates on the structural integrity, phase purity, morphology, composition, magnetic properties, and electronic behavior of V2O5 thin films synthesized through chemical solution methods on Si (111), ITO-coated glass, and glass substrates. The amorphous and smooth surfaces of the films were found on glass substrates, while those on ITO-coated glass and Si (111) substrates displayed a polycrystalline nature, with crystallinity increasing from ITO-coated glass to Si. Atomic force microscopy (AFM) confirmed the RMS roughness of the films, and morphology was conducted using high-resolution scanning electron microscopy (HR-SEM) and also energy-dispersive spectroscopy (EDS) mapping for elemental characterization. To know the functional groups present in the samples, Fourier-transform infrared (FT-IR) spectroscopy was employed. The band gap, measured by UV-Vis spectroscopy, ranged from 0.79 ± 0.01 to 0.9 ± 0.01 eV. The bulk magnetization measurements suggest that it exhibits ferromagnetic (FM) behavior with a saturation magnetization of 0.0–0.5 µB/cc. Core-level spectroscopy revealed that vanadium exists in a mixed oxidation state of 5+ and 4+. Findings from XPS, HR-SEM, and UV-Vis measurements confirm oxygen vacancies have a significant role in reducing the band gap and enhancing FM-like behavior in V2O5/Si films, which are also influenced by the films’ crystallinity and morphology. These results could pay great attention to the development of spintronic devices.

Graphical Abstract

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来源期刊
Journal of Sol-Gel Science and Technology
Journal of Sol-Gel Science and Technology 工程技术-材料科学:硅酸盐
CiteScore
4.70
自引率
4.00%
发文量
280
审稿时长
2.1 months
期刊介绍: The primary objective of the Journal of Sol-Gel Science and Technology (JSST), the official journal of the International Sol-Gel Society, is to provide an international forum for the dissemination of scientific, technological, and general knowledge about materials processed by chemical nanotechnologies known as the "sol-gel" process. The materials of interest include gels, gel-derived glasses, ceramics in form of nano- and micro-powders, bulk, fibres, thin films and coatings as well as more recent materials such as hybrid organic-inorganic materials and composites. Such materials exhibit a wide range of optical, electronic, magnetic, chemical, environmental, and biomedical properties and functionalities. Methods for producing sol-gel-derived materials and the industrial uses of these materials are also of great interest.
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