铈掺杂SrTiO3低成本超级电容器电极材料的研制

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Mahmood Ali, Soumaya Gouadria, F. F. Alharbi, Muhammad Abdullah, Salma Aman, Hafiz Muhammad Tahir Farid
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引用次数: 0

摘要

钙钛矿在解决全球能源危机方面显示出巨大的潜力,评估假电容材料的长期耐用性至关重要。因此,掺杂对提高材料的循环稳定性和电容性能是有效的。在本研究中,Ce掺杂显著增强了SrTiO3电极的电化学特性。铈掺杂SrTiO3的优异电化学性能可归因于其晶体结构、形貌和表面积等特性的改善。纯SrTiO3和ce掺杂SrTiO3的比电容分别为1071 F/g和1339 F/g。Nyquist图发现电荷转移电阻为0.1 Ω。经过5000次循环50小时后,材料表现出电稳定性,表明其结构保持不变。掺ce的SrTiO3电极材料性能有所提高,表明其在下一代储能技术中具有应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of Ce-doped SrTiO3 low-cost electrode material for supercapacitor applications

Perovskites show significant potential in addressing the global energy crises and assessing the long-term durability of pseudocapacitive materials is critical. So, doping has proven effective in improving materials’ cyclic stability and capacitive properties. In this study, Ce doping significantly enhanced the electrochemical characteristics of  SrTiO3 electrode. The remarkable electrochemical properties of Ce-doped SrTiO3 can be attributed to improved characteristics, such as its crystal structure, morphology and surface area. The specific capacitance of pure SrTiO3 and Ce-doped SrTiO3 was found to be 1071 F/g and 1339 F/g. The Nyquist plot found charge transfer resistance of 0.1 Ω. After 50 h of undergoing 5000th cycles, the material exhibited electrical stability, indicating that its structure remained unchanged. The Ce-doped SrTiO3 electrode material with improved performance showed it has to be utilized for next generation energy storing technology.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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