1-5 GHz 3.5位GaN MMIC可变衰减器,55 dB范围

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Seth Johannes;Kenneth E. Kolodziej;Zoya Popović
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引用次数: 0

摘要

这封信提出了一个3.5位可变衰减器(VA) MMIC,工作频率为1-5 GHz。MMIC采用Qorvo 250nm BCB2 GaN-on-SiC工艺实现。通过电阻T网络和HEMT开关器件,可实现5 dB步长55 dB的衰减范围。比特值在5、10和20/40网络中实现。20 dB和40 dB电阻网络组合成一个网络,衰减水平由可切换的分流电阻决定,从而产生额外的半比特。对于20 dB和40 dB T网络所需的$10~\Omega $和$1~\Omega $分流电阻值,使用分流开关器件的$R_{\ mathm {on}}$,平衡器件的$R_{\ mathm {on}}$和$C_{\ mathm {off}}$。VA显示了所有11种衰减状态,在5:1频率范围内,所有状态的回波损耗都优于10 dB,最小输入P1dB为34 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1–5 GHz 3.5-bit GaN MMIC Variable Attenuator With 55 dB Range
This letter presents a 3.5-bit variable attenuator (VA) MMIC that operates from 1–5 GHz. The MMIC is implemented in the Qorvo 250 nm BCB2 GaN-on-SiC process. An attenuation range of 55 dB in steps of 5 dB is achieved with resistive T networks and HEMT switch devices. The bit values are implemented with 5, 10, and 20/40 networks. The 20 and 40 dB resistive networks are combined into a single network, with the attenuation level determined by a switchable shunt resistance, resulting in an additional half bit. For the desired $10~\Omega $ and $1~\Omega $ shunt resistance values of the 20 and 40 dB T networks, the $R_{\mathrm { on}}$ of the shunt switch devices are used, balancing the $R_{\mathrm { on}}$ and $C_{\mathrm { off}}$ of the device. The VA demonstrates all 11 attenuation states with a return loss better than 10 dB across all states within a 5:1 frequency range and a minimum input P1dB of 34 dBm.
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CiteScore
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