一种13.2 fj /Step 74.3 db SNDR流水线噪声整形SAR+VCO ADC

Sumukh Prashant Bhanushali;Arindam Sanyal
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引用次数: 0

摘要

这项工作提出了一种无ota的流水线无源噪声整形连续逼近寄存器(NS-SAR) + VCO ADC,它提供高分辨率(>12位),只有5位NS-SAR级,与具有类似ENOB的最先进NS-SAR相比,采样电容低4倍至36倍。NS-SAR和VCO级的流水化通过减小VCO的输入摆幅来线性化VCO,增加了VCO的积分时间和能量效率,并通过抑制级间增益的频率依赖性来提高ADC的SFDR。我们演示了一种简单的校准技术来提取级间增益并在背景中准确地跟踪VCO增益。原型ADC采用65纳米CMOS制造,在同类技术的最先进无源NS-SAR ADC中实现了最佳的Walden FoM,功耗为0.12 mW, SNDR/SFDR为74.3/89.1 dB, OSR为9,13.2 fJ/步长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 13.2-fJ/Step 74.3-dB SNDR Pipelined Noise-Shaping SAR+VCO ADC
This work presents an OTA-free pipelined passive noise-shaping successive approximation register (NS-SAR) + VCO ADC that offers high resolution (>12-bit) with only a 5-bit NS-SAR stage and $4\times $ $36\times $ lower sampling capacitor compared to state-of-the-art NS-SARs with similar ENOB. Pipelining the NS-SAR and VCO stage linearizes VCO by reducing its input swing, increases the VCO integration time and its energy efficiency, and improves the SFDR of ADC by suppressing frequency dependency of interstage gain. We demonstrate a simple calibration technique to extract interstage gain and track VCO gain accurately in the background. Fabricated in 65-nm CMOS, the prototype ADC achieves the best Walden FoM among state-of-the-art passive NS-SAR ADCs in similar technology and consumes 0.12 mW with SNDR/SFDR of 74.3/89.1 dB at 13.2 fJ/step for OSR of 9.
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