{"title":"用于人工智能和机器学习的3D缓冲存储器","authors":"Maarten Rosmeulen","doi":"10.1038/s44287-024-00138-2","DOIUrl":null,"url":null,"abstract":"The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"2 2","pages":"75-76"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 3D buffer memory for AI and machine learning\",\"authors\":\"Maarten Rosmeulen\",\"doi\":\"10.1038/s44287-024-00138-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.\",\"PeriodicalId\":501701,\"journal\":{\"name\":\"Nature Reviews Electrical Engineering\",\"volume\":\"2 2\",\"pages\":\"75-76\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-01-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Reviews Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.nature.com/articles/s44287-024-00138-2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00138-2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.
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