纳米级氧化通道铁电场效应晶体管中的离散铁电极化开关

IF 9.1 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-02-13 DOI:10.1021/acs.nanolett.4c05731

Yanjie Shao, Elham Rafie Borujeny, Jorge Navarro Fidalgo, John Chao-Chung Huang, Tyra E. Espedal, Dimitri A. Antoniadis, Jesús A. del Alamo

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引用次数: 0

摘要

在这项工作中，我们研究了尺寸降至FE畴级的非晶氧化物半导体沟道在氧化铪锆（HZO）铁电场效应晶体管中的极化开关行为。通道厚度缩放是增强存储窗口（MW）的有效方法。在氧化铟锡通道厚度为2.5 nm的情况下，我们展示了2.2 V的大MW。在窄通道和短通道晶体管中观察到离散的FE极化开关，其中涉及少量的FE畴。基于通道长度的详细MW缩放研究，我们估计我们的HZO中FE域的大小为~ 40 nm。在纳米级晶体管中进行的疲劳实验表明，FE畴的钉钉作用起主导作用，导致负阈值电压偏移和毫瓦退化。我们的结果为探索基于单畴行为的FE物理开辟了一条新的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors

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Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect Transistors

In this work, we study polarization switching behavior in scaled hafnium–zirconium oxide (HZO) ferroelectric (FE) field-effect transistors with an amorphous oxide-semiconductor channel with dimensions down to the FE domain level. Channel thickness scaling acts as an effective approach to memory window (MW) enhancement. With an indium–tin oxide channel thickness of 2.5 nm, we demonstrate a large MW of 2.2 V. Discrete FE polarization switching is observed in narrow- and short-channel transistors, where a small number of FE domains are involved. Based on a detailed MW scaling study with channel length, we estimate the size of the FE domain in our HZO to be ∼40 nm. Fatigue experiments in nanoscale transistors reveal the dominant role of FE domain pinning, which leads to negative threshold voltage shift and degraded MW. Our results open up a new avenue for probing FE physics based on single domain behavior.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.