一种新型的混合静态偏置电压校准技术,用于动态比较器,采用大块电压和分流电流微调技术

IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Fadi Nessir Zghoul , Takwa Shawkat Awad Mansour , Jaafar Alghazo , Ghazanfar Latif
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引用次数: 0

摘要

本文提出了一种新的混合数字控制电路技术,用于校准180 nm CMOS技术中基于PMOS输入晶体管的强臂锁存动态比较器前置放大级的静态偏置电压。所提出的偏置电压校准电路技术的基本思想是通过调整阈值电压和连接新的分流晶体管来平衡前置放大器级的输入漏极电流。混合电路技术将结合两个事实来校准失调电压。第一个事实是本体端子(VB)的电压直接影响阈值电压(Vth)。第二个事实与PMOS晶体管的性能有关。这种集成方法提供高度精确和可靠的偏置电压校准。所提出的技术的优点之一是它不需要任何额外的电源或产生高于电压源的电压。它还消除了需要额外的开关,可能会引入剩余的失调电压。此外,该方法为本体和栅极提供不间断的电压,从而提高了校准过程的准确性。失调电压校正分三个阶段进行,从3.9 mV降低到600 μV,功耗为67.02 μW,设计面积为421 μm2。这种显著的减少提高了校准过程的精度,从而提高了比较器的性能和准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel hybrid static offset voltage calibration technique for dynamic comparators using bulk voltage and shunt current trimming techniques
In this paper, a new hybrid digitally controlled circuit technique is proposed to calibrate the static offset voltage in the preamplifier stage for the Strong-Arm latch-based dynamic comparator with PMOS input transistors in 180 nm CMOS technology. The fundamental idea for the proposed offset voltage calibration circuit technique is to balance the input drain currents in the preamplifier stage by adjusting the threshold voltage and connecting new shunt transistors. The hybrid circuit technique will combine two facts to calibrate the offset voltage. The first fact is that the voltage of the body terminal (VB) directly affects the threshold voltage (Vth). The second fact is related to the behavior of PMOS transistors. This integrated approach offers highly accurate and reliable offset voltage calibration. One of the advantages of the proposed technique is that it does not require any additional power supply or generate a voltage higher than the voltage source. It also eliminates the need for extra switches that could introduce a residual offset voltage. Moreover, this method supplies uninterrupted voltages to the bodies and gates, thereby enhancing the accuracy of the calibration procedure. The offset voltage calibration is performed in three phases, reducing from 3.9 mV to 600 μV with a power consumption of 67.02 μW and a design area of 421 μm2. This significant reduction enhances the precision of the calibration process, resulting in improved performance and accuracy for the comparator.
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来源期刊
Integration-The Vlsi Journal
Integration-The Vlsi Journal 工程技术-工程:电子与电气
CiteScore
3.80
自引率
5.30%
发文量
107
审稿时长
6 months
期刊介绍: Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics: Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.
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