氮化硼碳杂化纳米管缺陷致光猝灭研究

IF 4.6 2区化学 Q2 CHEMISTRY, PHYSICAL

The Journal of Physical Chemistry Letters Pub Date : 2025-02-10 DOI:10.1021/acs.jpclett.4c03681

Desman Perdamaian Gulo, Nguyen Tuan Hung, Wei-Liang Chen, Shuhui Wang, Ming Liu, Esko I. Kauppinen, Hikaru Takehara, Atsushi Taguchi, Takashi Taniguchi, Shigeo Maruyama, Yu-Ming Chang, Riichiro Saito, Hsiang-Lin Liu

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引用次数: 0

摘要

利用266 nm激光同时观察了垂直排列的氮化硼纳米管（VA-BNNT）和光致发光（PL）光谱和氮化硼封装的单壁碳纳米管（SWNT）（VA-SWNT@BNNT）。与h-BN单晶相比，VA-BNNT的PL强度更大，表明VA-BNNT含有更多的缺陷态。VA-SWNT@BNNT在3033和3142 cm-1处有两个多声子拉曼峰，在4639、5859、6905和8293 cm-1处有四个PL峰。值得注意的是，VA-SWNT@BNNT的PL强度比VA-BNNT小20倍。在VA-SWNT中，我们在4677 cm-1处观察到一个额外的拉曼峰，它与VA-SWNT@BNNT的4639 cm-1 PL峰紧密一致，这表明VA-BNNT中的光激发电子可能转移到VA-SWNT@BNNT的VA-SWNT组分内的拉曼过程。第一性原理计算确定了具有取代缺陷的氮化硼双分子层中可能的供体和受体状态（例如，碳取代硼或氮）。这些缺陷状态也与理解BNNT中PL的起源有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Quenching of Defect-Induced Photoluminescence in a Boron-Nitride and Carbon Hetero-nanotube

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Quenching of Defect-Induced Photoluminescence in a Boron-Nitride and Carbon Hetero-nanotube

Using a 266 nm laser, we simultaneously observe Raman and photoluminescence (PL) spectra of vertically aligned boron-nitride nanotubes (VA-BNNT) and single-walled carbon nanotubes (SWNT) encapsulated by boron nitride (VA-SWNT@BNNT). The larger PL intensity in VA-BNNT compared to that of the h-BN single crystal suggests that VA-BNNT contains more defect states. VA-SWNT@BNNT exhibits two multiphonon Raman peaks at 3033 and 3142 cm^–1 and four PL peaks at 4639, 5859, 6905, and 8293 cm^–1. Notably, the PL intensity of VA-SWNT@BNNT is 20 times smaller than that of VA-BNNT. In VA-SWNT, we observe an additional Raman peak at 4677 cm^–1, which closely aligns with the 4639 cm^–1 PL peak of VA-SWNT@BNNT, suggesting photoexcited electrons in VA-BNNT may transfer to the Raman process within VA-SWNT component of VA-SWNT@BNNT. The first-principles calculations identify possible donor and acceptor states in BN bilayers with substitutional defects (e.g., carbon replacing boron or nitrogen). These defect states are also relevant to understanding the origin of PL in BNNT.

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来源期刊

The Journal of Physical Chemistry Letters CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY

CiteScore

9.60

自引率

7.00%

发文量

1519

审稿时长

1.6 months

期刊介绍： The Journal of Physical Chemistry (JPC) Letters is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, chemical physicists, physicists, material scientists, and engineers. An important criterion for acceptance is that the paper reports a significant scientific advance and/or physical insight such that rapid publication is essential. Two issues of JPC Letters are published each month.