微晶金刚石层上自取向二硫化钼纳米片:受控合成及光电效应

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Oleg Babčenko*, Michaela Sojková, Martin Hulman, Jan Čermák, Alexander Kromka, Victor E.P. Claerbout, Paolo Nicolini, Diego López-Carballeira, Jaroslav Kuliček and Bohuslav Rezek*, 
{"title":"微晶金刚石层上自取向二硫化钼纳米片:受控合成及光电效应","authors":"Oleg Babčenko*,&nbsp;Michaela Sojková,&nbsp;Martin Hulman,&nbsp;Jan Čermák,&nbsp;Alexander Kromka,&nbsp;Victor E.P. Claerbout,&nbsp;Paolo Nicolini,&nbsp;Diego López-Carballeira,&nbsp;Jaroslav Kuliček and Bohuslav Rezek*,&nbsp;","doi":"10.1021/acsaelm.4c0170410.1021/acsaelm.4c01704","DOIUrl":null,"url":null,"abstract":"<p >Combining diamond and two-dimensional materials is attracting increasing attention for synergic effects that have the best of both worlds. Applications range from electronics and quantum technologies to catalysis, energy conversion, and biosensors. Here, heterostructures based on hydrogenated diamond microcrystalline thin films with attached MoS<sub>2</sub> nanosheets are formed by a single-zone annealing at atmospheric pressure. By varying the process parameters, MoS<sub>2</sub> sheets are controllably synthesized in a vertical or horizontal orientation with respect to the diamond grain facets, which leads to a pronounced impact on the electronic and optoelectronic properties of the heterostructures. Raman, SEM, AFM, KPFM, and SKP analyses show the influence of the MoS<sub>2</sub> orientation and thickness on the work function, surface potential, spatially and spectrally resolved photovoltage, and charge transfer kinetics. The aligned growth of MoS<sub>2</sub> nanosheets and their properties are elucidated by molecular mechanics and time-dependent DFT calculations, which explain the mechanism of the assembly and the related optoelectronic effects in a straightforward way. The major switching point occurs precisely at 11 nm of the MoS<sub>2</sub> thickness/length. The highest photoresponse of 350 meV and favorable charge transfer are observed for the vertical MoS<sub>2</sub> arrangement on diamond, yet without a covalent bond. The results and theoretical model hint at broader implications beyond the MoS<sub>2</sub>-diamond system.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1004–1018 1004–1018"},"PeriodicalIF":4.7000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01704","citationCount":"0","resultStr":"{\"title\":\"Self-Oriented MoS2 Nanosheets on Microcrystalline Diamond Layers: Controlled Synthesis and Optoelectronic Effects\",\"authors\":\"Oleg Babčenko*,&nbsp;Michaela Sojková,&nbsp;Martin Hulman,&nbsp;Jan Čermák,&nbsp;Alexander Kromka,&nbsp;Victor E.P. Claerbout,&nbsp;Paolo Nicolini,&nbsp;Diego López-Carballeira,&nbsp;Jaroslav Kuliček and Bohuslav Rezek*,&nbsp;\",\"doi\":\"10.1021/acsaelm.4c0170410.1021/acsaelm.4c01704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Combining diamond and two-dimensional materials is attracting increasing attention for synergic effects that have the best of both worlds. Applications range from electronics and quantum technologies to catalysis, energy conversion, and biosensors. Here, heterostructures based on hydrogenated diamond microcrystalline thin films with attached MoS<sub>2</sub> nanosheets are formed by a single-zone annealing at atmospheric pressure. By varying the process parameters, MoS<sub>2</sub> sheets are controllably synthesized in a vertical or horizontal orientation with respect to the diamond grain facets, which leads to a pronounced impact on the electronic and optoelectronic properties of the heterostructures. Raman, SEM, AFM, KPFM, and SKP analyses show the influence of the MoS<sub>2</sub> orientation and thickness on the work function, surface potential, spatially and spectrally resolved photovoltage, and charge transfer kinetics. The aligned growth of MoS<sub>2</sub> nanosheets and their properties are elucidated by molecular mechanics and time-dependent DFT calculations, which explain the mechanism of the assembly and the related optoelectronic effects in a straightforward way. The major switching point occurs precisely at 11 nm of the MoS<sub>2</sub> thickness/length. The highest photoresponse of 350 meV and favorable charge transfer are observed for the vertical MoS<sub>2</sub> arrangement on diamond, yet without a covalent bond. The results and theoretical model hint at broader implications beyond the MoS<sub>2</sub>-diamond system.</p>\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":\"7 3\",\"pages\":\"1004–1018 1004–1018\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2025-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://pubs.acs.org/doi/epdf/10.1021/acsaelm.4c01704\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsaelm.4c01704\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c01704","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

金刚石与二维材料的结合因其具有两全其美的协同效应而越来越受到人们的关注。应用范围从电子和量子技术到催化、能量转换和生物传感器。在大气压下,通过单区退火,制备了附着二硫化钼纳米片的氢化金刚石微晶薄膜异质结构。通过改变工艺参数,可以在相对于金刚石晶粒面的垂直或水平方向上可控地合成二硫化钼片,从而对异质结构的电子和光电子性能产生显著影响。Raman, SEM, AFM, KPFM和SKP分析表明,MoS2取向和厚度对功函数,表面势,空间和光谱分辨光电压以及电荷转移动力学的影响。通过分子力学和时间相关的DFT计算,阐明了二硫化钼纳米片的排列生长及其性质,从而直观地解释了组装机制和相关的光电效应。主要开关点恰好发生在MoS2厚度/长度的11nm处。在没有共价键的情况下,MoS2在金刚石上的垂直排列具有最高的350 meV光响应和良好的电荷转移。结果和理论模型暗示了mos2 -金刚石系统之外的更广泛的含义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-Oriented MoS2 Nanosheets on Microcrystalline Diamond Layers: Controlled Synthesis and Optoelectronic Effects

Combining diamond and two-dimensional materials is attracting increasing attention for synergic effects that have the best of both worlds. Applications range from electronics and quantum technologies to catalysis, energy conversion, and biosensors. Here, heterostructures based on hydrogenated diamond microcrystalline thin films with attached MoS2 nanosheets are formed by a single-zone annealing at atmospheric pressure. By varying the process parameters, MoS2 sheets are controllably synthesized in a vertical or horizontal orientation with respect to the diamond grain facets, which leads to a pronounced impact on the electronic and optoelectronic properties of the heterostructures. Raman, SEM, AFM, KPFM, and SKP analyses show the influence of the MoS2 orientation and thickness on the work function, surface potential, spatially and spectrally resolved photovoltage, and charge transfer kinetics. The aligned growth of MoS2 nanosheets and their properties are elucidated by molecular mechanics and time-dependent DFT calculations, which explain the mechanism of the assembly and the related optoelectronic effects in a straightforward way. The major switching point occurs precisely at 11 nm of the MoS2 thickness/length. The highest photoresponse of 350 meV and favorable charge transfer are observed for the vertical MoS2 arrangement on diamond, yet without a covalent bond. The results and theoretical model hint at broader implications beyond the MoS2-diamond system.

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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