共沉淀法合成ni掺杂SnO2纳米结构及其结构、光学和介电性能研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zakir Ullah, Syed Zulfiqar, Shaukat Ali Khattak, Abeer M. Beagan, Gul Rooh, Tahirzeb Khan, Gulzar Khan
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引用次数: 0

摘要

在本研究中,研究了通过共沉淀法生长的低维原始SnO2和掺杂不同镍浓度的SnO2的介电和光学特性。XRD结果表明,所制备的样品均为四方相。XRD谱图还表明,随着掺杂量的增加,晶粒尺寸和结晶度减小,微应变增大。通过扫描电镜可以清楚地看到其球形形态结构。因此,原始样品中锡、氧和镍的元素浓度以及所有掺杂样品中的锡、氧和镍的元素浓度都由EDX显示出来。EDX结果还表明,随着镍掺杂量的增加,氧浓度降低,SnO2样品缺氧。这导致在SnO2晶格中形成更多的空位。用FTIR研究了SnO2的振动模式。紫外可见光谱结果表明,随着Ni含量的增加,吸光度增加,其中Ni掺杂量为5 wt.%的样品吸光度最高。样品中有较高的氧空位(缺陷密度),重量为5 wt.%。由于晶体尺寸小,且Ni2+和Ni3+之间的跳变机制增强,使得介电常数分布均匀。存储设备最好的样品是5-wt的。%镍,随着镍含量的增加,介质损耗降低。然而,当Ni含量上升到5 wt.%时,Ni掺杂的SnO2在更高频率下的导电性得到改善,使其成为高频器件的合适材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Coprecipitation synthesis of Ni-doped SnO2 nanostructures and study of their structural, optical, and dielectric properties

Coprecipitation synthesis of Ni-doped SnO2 nanostructures and study of their structural, optical, and dielectric properties

In this study, the dielectric and optical characteristics of low-dimensional pristine SnO2 and SnO2 doped with various nickel concentrations, grown through the coprecipitation method, are investigated. All the prepared samples demonstrate tetragonal phase according to the XRD results. The XRD pattern also shows that as the amount of the dopant increases, both the crystallite size and crystallinity decrease while the microstrain increases. The spherical morphological structure is made clear by SEM pictures. Consequently, elemental concentrations of tin, oxygen, and nickel in pristine samples and tin, oxygen, and nickel in all doped samples are shown by EDX. The EDX result indicates also that as the amount of nickel dopants increases, the oxygen concentration decreases and the SnO2 sample becomes oxygen deficient. This results in more vacancies forming into the SnO2 lattice. FTIR is used to study the vibrational modes of SnO2. The UV–Vis reveals that with increasing the Ni content, the absorbance rises, i.e., the samples doped with 5 wt.% Ni demonstrate the highest absorbance. There are higher oxygen vacancies (defect density) in the sample weighing 5 wt.%. The dielectric constant is found to be distributed due to the small size of the crystallites and the increased hopping mechanism between Ni2+ and Ni3+. The best sample for storage devices is the one with 5-wt.% nickel, as indicated by the decrease in dielectric loss that occurs with an increase in nickel content. However, as the Ni content rises to 5 wt.%, Ni-doped SnO2 exhibits an improvement in conductivity at higher frequencies, making it a suitable material for high-frequency devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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