{"title":"超级电容器用掺杂锡的W18O49材料三维海胆形态研究","authors":"Yanmei Li, Jin Hu, Zhongshan Deng, Huachao Huang, Zheng Liu, Jiaxin Fu, Kaijun Wang, Kaizhao Wang, Yongjin Feng, Weijun Zhang","doi":"10.1007/s10854-025-14232-0","DOIUrl":null,"url":null,"abstract":"<div><p>High-performance supercapacitors are essential for advancing energy storage devices, and superior active materials are crucial for this purpose. W<sub>18</sub>O<sub>49</sub> is recognized as a highly promising electrode material, such as in the form of nanowires and nanorods, for energy conversion and storage. However, it still faces challenges like low conductivity and insufficient active sites. The strategy of heteroatom doping has shown effectiveness, such as tin (Sn), which has potential for enhancing matrix performance, but it has not been explored for W<sub>18</sub>O<sub>49</sub> materials. Herein, a series of Sn-doped W<sub>18</sub>O<sub>49</sub> materials are carefully designed and synthesized using a straightforward one-pot solvent-thermal method in this study. Various analyses are conducted to confirm successful Sn doping and to observe structural changes with different Sn concentrations. The optimal material is identified as 3% Sn-W<sub>18</sub>O<sub>49</sub>, which displays a unique 3D sea urchin-like structure as observed via SEM and TEM. Furthermore, XRD peaks related to SnO impurities are noted at higher Sn doping levels, such as 5% and 7% Sn-W<sub>18</sub>O<sub>49</sub>. Electrochemical testing reveals a high specific capacitance of 546 F∙g<sup>−1</sup> at 4 A∙g<sup>−1</sup> for the 3% Sn-W<sub>18</sub>O<sub>49</sub> electrode, alongside excellent long-term cycling stability with an 86% capacitance retention after 6000 GCD cycles. The enhanced performance is attributed to the improved electrical conductivity, surface area, and active sites of the W<sub>18</sub>O<sub>49</sub> through optimal Sn doping. This research highlights the promising electrochemical properties of Sn-doped W<sub>18</sub>O<sub>49</sub> materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sn-doped three-dimensional sea urchin-like morphology of W18O49 marterials for supercapacitor\",\"authors\":\"Yanmei Li, Jin Hu, Zhongshan Deng, Huachao Huang, Zheng Liu, Jiaxin Fu, Kaijun Wang, Kaizhao Wang, Yongjin Feng, Weijun Zhang\",\"doi\":\"10.1007/s10854-025-14232-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>High-performance supercapacitors are essential for advancing energy storage devices, and superior active materials are crucial for this purpose. W<sub>18</sub>O<sub>49</sub> is recognized as a highly promising electrode material, such as in the form of nanowires and nanorods, for energy conversion and storage. However, it still faces challenges like low conductivity and insufficient active sites. The strategy of heteroatom doping has shown effectiveness, such as tin (Sn), which has potential for enhancing matrix performance, but it has not been explored for W<sub>18</sub>O<sub>49</sub> materials. Herein, a series of Sn-doped W<sub>18</sub>O<sub>49</sub> materials are carefully designed and synthesized using a straightforward one-pot solvent-thermal method in this study. Various analyses are conducted to confirm successful Sn doping and to observe structural changes with different Sn concentrations. The optimal material is identified as 3% Sn-W<sub>18</sub>O<sub>49</sub>, which displays a unique 3D sea urchin-like structure as observed via SEM and TEM. Furthermore, XRD peaks related to SnO impurities are noted at higher Sn doping levels, such as 5% and 7% Sn-W<sub>18</sub>O<sub>49</sub>. Electrochemical testing reveals a high specific capacitance of 546 F∙g<sup>−1</sup> at 4 A∙g<sup>−1</sup> for the 3% Sn-W<sub>18</sub>O<sub>49</sub> electrode, alongside excellent long-term cycling stability with an 86% capacitance retention after 6000 GCD cycles. The enhanced performance is attributed to the improved electrical conductivity, surface area, and active sites of the W<sub>18</sub>O<sub>49</sub> through optimal Sn doping. This research highlights the promising electrochemical properties of Sn-doped W<sub>18</sub>O<sub>49</sub> materials.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 4\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-02-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14232-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14232-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Sn-doped three-dimensional sea urchin-like morphology of W18O49 marterials for supercapacitor
High-performance supercapacitors are essential for advancing energy storage devices, and superior active materials are crucial for this purpose. W18O49 is recognized as a highly promising electrode material, such as in the form of nanowires and nanorods, for energy conversion and storage. However, it still faces challenges like low conductivity and insufficient active sites. The strategy of heteroatom doping has shown effectiveness, such as tin (Sn), which has potential for enhancing matrix performance, but it has not been explored for W18O49 materials. Herein, a series of Sn-doped W18O49 materials are carefully designed and synthesized using a straightforward one-pot solvent-thermal method in this study. Various analyses are conducted to confirm successful Sn doping and to observe structural changes with different Sn concentrations. The optimal material is identified as 3% Sn-W18O49, which displays a unique 3D sea urchin-like structure as observed via SEM and TEM. Furthermore, XRD peaks related to SnO impurities are noted at higher Sn doping levels, such as 5% and 7% Sn-W18O49. Electrochemical testing reveals a high specific capacitance of 546 F∙g−1 at 4 A∙g−1 for the 3% Sn-W18O49 electrode, alongside excellent long-term cycling stability with an 86% capacitance retention after 6000 GCD cycles. The enhanced performance is attributed to the improved electrical conductivity, surface area, and active sites of the W18O49 through optimal Sn doping. This research highlights the promising electrochemical properties of Sn-doped W18O49 materials.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.