Bi2O2Se Nanoplates for Lateral Memristor Devices

Bi₂O₂Se has emerged as a promising 2D semiconductor for a wide range of applications, including 2D FinFETs and neuromorphic computing, due to its high carrier mobility and stability. However, precise control over Bi₂O₂Se thickness and the growth of both in-plane and vertical orientations on mica substrates remains a significant challenge. In this study, we report a highly controllable synthesis of Bi₂O₂Se nanoplates (approximately 5 to 250 nm) using an inner tube-assisted chemical vapor deposition (CVD) method. By optimizing the inner tube dimensions and growth conditions, we successfully synthesized high-quality Bi₂O₂Se nanoplates with enhanced control over nucleation density, lateral dimensions, and growth orientation (both in-plane and vertical), making them suitable for advanced electronic applications. The resulting nanoplates exhibit excellent crystallinity, uniform thickness, and superior electronic properties, including high carrier mobility up to 127 cm²/V·s. The Bi₂O₂Se-based memristors exhibit an endurance of over 28,000 cycles and a fast set/reset time of 400 μs, making them highly suitable for energy-efficient computing and memory applications. The ability to achieve both in-plane and vertical growth orientations enables the design of advanced device architectures. Overall, this inner tube-assisted method offers a scalable and effective approach for the development of next-generation 2D electronics.