{"title":"280-300 GHz SiGe-InP混合集成发射机，EIRP 21.9 dBm，数据速率10gbps","authors":"Haiyan Lu, Jixin Chen, Pinpin Yan, Si-Yuan Tang, Yu Zheng, Sidou Zheng, Wei Cheng, Yan Sun, Peigen Zhou, Long Chang, Longzhu Cai, Zhi Hao Jiang, Hongqi Tao, Tangsheng Chen, Wei Hong","doi":"10.1049/mia2.12532","DOIUrl":null,"url":null,"abstract":"<p>In this paper, a 280–300 GHz hybrid-integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300-GHz power amplifier and on-chip antenna are realised in InP technology for high output power and small die size. The low-cost bonding wires are introduced for the interconnection between these two chips, and the lens are attached above the on-chip antenna for further EIRP enhancement. Finally, the proposed transmitter is fabricated and measured, which shows comparable performances with 21.9 dBm EIRP (equivalent isotropic radiated power) and 10 Gbps data rate.</p>","PeriodicalId":13374,"journal":{"name":"Iet Microwaves Antennas & Propagation","volume":"18 12","pages":"878-884"},"PeriodicalIF":1.1000,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/mia2.12532","citationCount":"0","resultStr":"{\"title\":\"280–300 GHz SiGe-InP hybrid-integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate\",\"authors\":\"Haiyan Lu, Jixin Chen, Pinpin Yan, Si-Yuan Tang, Yu Zheng, Sidou Zheng, Wei Cheng, Yan Sun, Peigen Zhou, Long Chang, Longzhu Cai, Zhi Hao Jiang, Hongqi Tao, Tangsheng Chen, Wei Hong\",\"doi\":\"10.1049/mia2.12532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this paper, a 280–300 GHz hybrid-integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300-GHz power amplifier and on-chip antenna are realised in InP technology for high output power and small die size. The low-cost bonding wires are introduced for the interconnection between these two chips, and the lens are attached above the on-chip antenna for further EIRP enhancement. Finally, the proposed transmitter is fabricated and measured, which shows comparable performances with 21.9 dBm EIRP (equivalent isotropic radiated power) and 10 Gbps data rate.</p>\",\"PeriodicalId\":13374,\"journal\":{\"name\":\"Iet Microwaves Antennas & Propagation\",\"volume\":\"18 12\",\"pages\":\"878-884\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2024-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/mia2.12532\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iet Microwaves Antennas & Propagation\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/mia2.12532\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iet Microwaves Antennas & Propagation","FirstCategoryId":"94","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/mia2.12532","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
280–300 GHz SiGe-InP hybrid-integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate
In this paper, a 280–300 GHz hybrid-integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300-GHz power amplifier and on-chip antenna are realised in InP technology for high output power and small die size. The low-cost bonding wires are introduced for the interconnection between these two chips, and the lens are attached above the on-chip antenna for further EIRP enhancement. Finally, the proposed transmitter is fabricated and measured, which shows comparable performances with 21.9 dBm EIRP (equivalent isotropic radiated power) and 10 Gbps data rate.
期刊介绍：
Topics include, but are not limited to:
Microwave circuits including RF, microwave and millimetre-wave amplifiers, oscillators, switches, mixers and other components implemented in monolithic, hybrid, multi-chip module and other technologies. Papers on passive components may describe transmission-line and waveguide components, including filters, multiplexers, resonators, ferrite and garnet devices. For applications, papers can describe microwave sub-systems for use in communications, radar, aerospace, instrumentation, industrial and medical applications. Microwave linear and non-linear measurement techniques.
Antenna topics including designed and prototyped antennas for operation at all frequencies; multiband antennas, antenna measurement techniques and systems, antenna analysis and design, aperture antenna arrays, adaptive antennas, printed and wire antennas, microstrip, reconfigurable, conformal and integrated antennas.
Computational electromagnetics and synthesis of antenna structures including phased arrays and antenna design algorithms.
Radiowave propagation at all frequencies and environments.
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