{"title":"Constructing topological insulator-ferromagnet heterojunctions of Bi2Se3/ Fe3GeTe2 and Bi2Te3/ Fe3GaTe2.","authors":"Xinke Liang, Fuhong Chen, Liu Yang, Tingting Yang, Peiyao Xiao, Yuxiang Liu, Zhiwei Wang, Wende Xiao","doi":"10.1088/1361-648X/adb274","DOIUrl":null,"url":null,"abstract":"<p><p>Heterostructures composed of topological insulators and ferromagnets are predicted to exhibit the quantum anomalous Hall effect (QAHE). The morphology and interfacial structure have a significant impact on the physical properties and transport performance of such heterostructures. Here, we report the epitaxial growth of topological insulators Bi2Se3 and Bi2Te3 thin films on ferromagnetic substrates of Fe3GeTe2 and Fe3GaTe2, respectively. The morphology and composition of the Bi2Se3 and Bi2Te3 thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. After optimizing the growth parameters, we successfully generated large-area films with high crystallinity, presenting new types of topological insulator-ferromagnet heterojunctions for the pursuit of the QAHE.
.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics: Condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-648X/adb274","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Constructing topological insulator-ferromagnet heterojunctions of Bi2Se3/ Fe3GeTe2 and Bi2Te3/ Fe3GaTe2.
Heterostructures composed of topological insulators and ferromagnets are predicted to exhibit the quantum anomalous Hall effect (QAHE). The morphology and interfacial structure have a significant impact on the physical properties and transport performance of such heterostructures. Here, we report the epitaxial growth of topological insulators Bi2Se3 and Bi2Te3 thin films on ferromagnetic substrates of Fe3GeTe2 and Fe3GaTe2, respectively. The morphology and composition of the Bi2Se3 and Bi2Te3 thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. After optimizing the growth parameters, we successfully generated large-area films with high crystallinity, presenting new types of topological insulator-ferromagnet heterojunctions for the pursuit of the QAHE.
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期刊介绍：
Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.
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