铁掺杂2H-MoS2单层电子结构和磁性能的应变调制：第一性原理计算研究

IF 1.7 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

The European Physical Journal B Pub Date : 2025-02-05 DOI:10.1140/epjb/s10051-025-00872-y

Wen-jing Lan, Hai-xin Li, Tong Du, Xue-ling Lin, Feng-chun Pan

{"title":"铁掺杂2H-MoS2单层电子结构和磁性能的应变调制：第一性原理计算研究","authors":"Wen-jing Lan, Hai-xin Li, Tong Du, Xue-ling Lin, Feng-chun Pan","doi":"10.1140/epjb/s10051-025-00872-y","DOIUrl":null,"url":null,"abstract":"<div><p>The first-principles calculation method is performed to explore the monolayer 2<i>H</i>-MoS<sub>2</sub>:Fe semiconductors with intrinsic ferromagnetism and strong ferromagnetic coupling by strain-modulation. In this study, we demonstrate that the biaxial strain can effectively regulate the distribution of local magnetic moment, magnetic coupling ground state types and strength. The studied results indicate that one Fe<sub>Mo</sub> dopant will bring 2 <span>\\(\\mu_{{\\text{B}}}\\)</span> local magnetic moment, which is not affected by strains in range of − 6~6%. However, electronic configuration, occupation and magnetic moment distribution are closely related to strains. Moreover, smaller compressive strain can effectively strengthen ferromagnetic interactions between two Fe<sub>Mo</sub> substitutions, and the most energy gains of ferromagnetic coupling reach to 153.9 meV under − 2% strain. However, the ferromagnetic ground state translates into antiferromagnetic one as strain in the range of − 6~ − 2.5%. The changes in magnetic moment and magnetic interaction originate from the competition between crystal-filed splitting and spin splitting under different strains. The theoretical results presented here predict that modulating the biaxial strain could be a very significant avenue to obtain intrinsic ferromagnetic 2<i>H</i>-MoS<sub>2</sub>:Fe semiconductors.</p><h3>Graphical abstract</h3><p>The effect of strain on the electronic structures and magnetic properties of Fe doped monolayer 2<i>H</i>-MoS<sub>2</sub> were studied by first-principles calculations. We found that electronic configuration, occupancy and magnetic moment distribution are closely related to strains. Smaller compressive strain can effectively strengthen FM interactions between two Fe<sub>Mo</sub> substitutions, and the most energy gains of FM coupling up to 153.9 meV under − 2% strain. However, the FM ground state translate into AFM one as strain in the range of − 6~− 2.5%. Our theoretical predictions highlight the important contribution of strain to electronic structures and magnetic properties, and present a valid avenue for the future design of high <i>T</i><sub><i>C</i></sub> material in monolayer MoS<sub>2</sub>: Fe system.</p>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":787,"journal":{"name":"The European Physical Journal B","volume":"98 2","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strain-modulation on electronic structures and magnetic properties of Fe doped monolayer 2H-MoS2: the first-principles calculation study\",\"authors\":\"Wen-jing Lan, Hai-xin Li, Tong Du, Xue-ling Lin, Feng-chun Pan\",\"doi\":\"10.1140/epjb/s10051-025-00872-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The first-principles calculation method is performed to explore the monolayer 2<i>H</i>-MoS<sub>2</sub>:Fe semiconductors with intrinsic ferromagnetism and strong ferromagnetic coupling by strain-modulation. In this study, we demonstrate that the biaxial strain can effectively regulate the distribution of local magnetic moment, magnetic coupling ground state types and strength. The studied results indicate that one Fe<sub>Mo</sub> dopant will bring 2 <span>\\\\(\\\\mu_{{\\\\text{B}}}\\\\)</span> local magnetic moment, which is not affected by strains in range of − 6~6%. However, electronic configuration, occupation and magnetic moment distribution are closely related to strains. Moreover, smaller compressive strain can effectively strengthen ferromagnetic interactions between two Fe<sub>Mo</sub> substitutions, and the most energy gains of ferromagnetic coupling reach to 153.9 meV under − 2% strain. However, the ferromagnetic ground state translates into antiferromagnetic one as strain in the range of − 6~ − 2.5%. The changes in magnetic moment and magnetic interaction originate from the competition between crystal-filed splitting and spin splitting under different strains. The theoretical results presented here predict that modulating the biaxial strain could be a very significant avenue to obtain intrinsic ferromagnetic 2<i>H</i>-MoS<sub>2</sub>:Fe semiconductors.</p><h3>Graphical abstract</h3><p>The effect of strain on the electronic structures and magnetic properties of Fe doped monolayer 2<i>H</i>-MoS<sub>2</sub> were studied by first-principles calculations. We found that electronic configuration, occupancy and magnetic moment distribution are closely related to strains. Smaller compressive strain can effectively strengthen FM interactions between two Fe<sub>Mo</sub> substitutions, and the most energy gains of FM coupling up to 153.9 meV under − 2% strain. However, the FM ground state translate into AFM one as strain in the range of − 6~− 2.5%. Our theoretical predictions highlight the important contribution of strain to electronic structures and magnetic properties, and present a valid avenue for the future design of high <i>T</i><sub><i>C</i></sub> material in monolayer MoS<sub>2</sub>: Fe system.</p>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":787,\"journal\":{\"name\":\"The European Physical Journal B\",\"volume\":\"98 2\",\"pages\":\"\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2025-02-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The European Physical Journal B\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1140/epjb/s10051-025-00872-y\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The European Physical Journal B","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1140/epjb/s10051-025-00872-y","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

采用第一性原理计算方法，对具有本征铁磁性和强铁磁性耦合的单层2H-MoS2:Fe半导体进行了应变调制。在本研究中，我们证明了双轴应变可以有效地调节局部磁矩分布、磁耦合基态类型和强度。研究结果表明，在−6 ～ 6的应变范围内，掺1个FeMo会产生2 \(\mu_{{\text{B}}}\)局域磁矩，而局域磁矩不受影响%. However, electronic configuration, occupation and magnetic moment distribution are closely related to strains. Moreover, smaller compressive strain can effectively strengthen ferromagnetic interactions between two FeMo substitutions, and the most energy gains of ferromagnetic coupling reach to 153.9 meV under − 2% strain. However, the ferromagnetic ground state translates into antiferromagnetic one as strain in the range of − 6~ − 2.5%. The changes in magnetic moment and magnetic interaction originate from the competition between crystal-filed splitting and spin splitting under different strains. The theoretical results presented here predict that modulating the biaxial strain could be a very significant avenue to obtain intrinsic ferromagnetic 2H-MoS2:Fe semiconductors.Graphical abstractThe effect of strain on the electronic structures and magnetic properties of Fe doped monolayer 2H-MoS2 were studied by first-principles calculations. We found that electronic configuration, occupancy and magnetic moment distribution are closely related to strains. Smaller compressive strain can effectively strengthen FM interactions between two FeMo substitutions, and the most energy gains of FM coupling up to 153.9 meV under − 2% strain. However, the FM ground state translate into AFM one as strain in the range of − 6~− 2.5%. Our theoretical predictions highlight the important contribution of strain to electronic structures and magnetic properties, and present a valid avenue for the future design of high TC material in monolayer MoS2: Fe system.

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Strain-modulation on electronic structures and magnetic properties of Fe doped monolayer 2H-MoS2: the first-principles calculation study

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Strain-modulation on electronic structures and magnetic properties of Fe doped monolayer 2H-MoS2: the first-principles calculation study

The first-principles calculation method is performed to explore the monolayer 2H-MoS₂:Fe semiconductors with intrinsic ferromagnetism and strong ferromagnetic coupling by strain-modulation. In this study, we demonstrate that the biaxial strain can effectively regulate the distribution of local magnetic moment, magnetic coupling ground state types and strength. The studied results indicate that one Fe_Mo dopant will bring 2 \(\mu_{{\text{B}}}\) local magnetic moment, which is not affected by strains in range of − 6~6%. However, electronic configuration, occupation and magnetic moment distribution are closely related to strains. Moreover, smaller compressive strain can effectively strengthen ferromagnetic interactions between two Fe_Mo substitutions, and the most energy gains of ferromagnetic coupling reach to 153.9 meV under − 2% strain. However, the ferromagnetic ground state translates into antiferromagnetic one as strain in the range of − 6~ − 2.5%. The changes in magnetic moment and magnetic interaction originate from the competition between crystal-filed splitting and spin splitting under different strains. The theoretical results presented here predict that modulating the biaxial strain could be a very significant avenue to obtain intrinsic ferromagnetic 2H-MoS₂:Fe semiconductors.

Graphical abstract

The effect of strain on the electronic structures and magnetic properties of Fe doped monolayer 2H-MoS₂ were studied by first-principles calculations. We found that electronic configuration, occupancy and magnetic moment distribution are closely related to strains. Smaller compressive strain can effectively strengthen FM interactions between two Fe_Mo substitutions, and the most energy gains of FM coupling up to 153.9 meV under − 2% strain. However, the FM ground state translate into AFM one as strain in the range of − 6~− 2.5%. Our theoretical predictions highlight the important contribution of strain to electronic structures and magnetic properties, and present a valid avenue for the future design of high T_C material in monolayer MoS₂: Fe system.

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