利用单层石墨烯复合材料实现SnO2的敏感氢传感

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Lingyun Wang, Yihan Shen, Zijie Jiao, Xiaotong Xu, Jie Xiang, Shuiming Huang, Tao Lu, Xueling Hou
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引用次数: 0

摘要

开发高性能传感器以快速可靠地检测空气中的氢气至关重要。本研究采用水热法合成了单层石墨烯/SnO2复合材料的氢传感器。研究的重点是评估不同掺杂水平的单层石墨烯(SLG)对SnO2基材料的氢传感能力的影响。结果表明,当SLG掺杂量为4 mg时,效果最佳。SnO2/SLG-4 mg材料在250℃时的响应效果最好,当氢浓度为10 ppm时,响应值为1.98,响应/恢复时间为1.32/3.54 s。单层石墨烯/SnO2复合传感器的传感机制归因于SLG的掺杂,SLG有利于在SnO2晶粒表面形成n-p异质结结构。这种结构增加了电子浓度;SLG掺杂也有助于晶粒细化。x射线光电子能谱(XPS)分析表明,SLG掺杂提高了氧空位的浓度,增加了材料表面活性位点的数量,从而优化了材料的氢传感能力。这种掺杂单层石墨烯的方法为制备低检测限气体传感器提供了新的思路和方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sensitive hydrogen sensing using SnO2 enabled by single-layer graphene composites

Developing high-performance sensors for the rapid and reliable detection of hydrogen in the air is crucial. In this study, a hydrogen sensor utilizing a single-layer graphene/SnO2 composite was synthesized via the hydrothermal method. The investigation focused on assessing the impact of varying doping levels of single-layer graphene (SLG) on the hydrogen-sensing capabilities of the SnO2 base material. The results indicated that optimal performance was achieved with an SLG doping of 4 mg. The SnO2/SLG-4 mg material exhibited its best response at a temperature of 250 °C, with a response value of 1.98 for 10 ppm of hydrogen, and a response/recovery time of 1.32/3.54 s. The sensing mechanism of the single-layer graphene/SnO2 composite sensor is attributed to the SLG doping, which facilitates the formation of an n-p heterojunction structure on the surface of the SnO2 grains. This structure increases the electron concentration; SLG doping also contributes to grain refinement. Analysis from X-ray photoelectron spectroscopy (XPS) revealed that SLG doping enhances the concentration of oxygen vacancies, increasing the number of active sites on the material's surface, thereby optimizing its hydrogen-sensing capabilities. This method of doping single-layer graphene provides a new idea and method for the preparation of low detection limit gas sensors.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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