不同AlInN分数的AlInN/GaN超晶格的光学和结构特性

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Haotian Xue, Elia Palmese, Ben J. Sekely, Dakota Gray-Boneker, Antonio Gonzalez, Daniel J. Rogers, Brian D. Little, Fred A. Kish, Jr, John F. Muth, Jonathan J. Wierer, Jr
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引用次数: 0

摘要

介绍了不同AlInN分数的AlInN/GaN超晶格(SLs)的生长和表征数据。使用金属有机化学气相沉积(MOCVD)生长SLs,并具有从1到0.125的AlInN分数(AlInN厚度/SL周期厚度),以探索获得良好表面形貌所需的GaN厚度。AlInN分数在0.992 ~ 0.645之间的SLs具有清晰的原子步骤和最小的表面缺陷,而AlInN分数越低,表面越粗糙。AlInN分数最高的样品(0.992)的氮化镓少于单层,但具有与较低分数相当的优异表面形貌。能量色散x射线光谱分析显示,在0.922 AlInN分数最高的样品中,存在预期的周期性Ga掺入,但同时也存在以基线Ga含量为基准的第四纪成分。椭偏光谱测量表明,SLs在GaN和alin之间具有折射率可调性。结果表明,SLs在广泛的AlInN分数范围内保持光滑的表面形态,为器件应用提供了出色的设计灵活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions
Data on the growth and characterization of AlInN/GaN superlattices (SLs) with varying AlInN fractions are presented. The SLs are grown using metal–organic chemical vapor deposition (MOCVD) and have AlInN fractions (AlInN thickness/SL period thickness) from 1 to 0.125 to explore the required GaN thickness to achieve good surface morphology. The SLs with AlInN fractions between 0.992 and 0.645 exhibited well-defined atomic steps and minimal surface defects, while lower fractions resulted in rougher surfaces. The highest AlInN fraction sample (0.992) has less than a monolayer of GaN but exhibits excellent surface morphology comparable to lower fractions. Energy-dispersive X-ray spectroscopy analysis on the highest 0.922 AlInN fraction sample revealed the expected periodic Ga incorporation but also a quaternary composition throughout with a baseline amount of Ga. Spectroscopic ellipsometry measurements demonstrated that the SLs provide refractive index tunability between GaN and AlInN. The results show that SLs maintain a smooth surface morphology across a wide range of AlInN fractions, offering excellent design flexibility for device applications.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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