IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY
Gagan Kumar Chappa, Milena Petković, Natasha Dropka
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引用次数: 0

摘要

研究人员进行了数值模拟,以检验在氩氧气氛下,流动磁场对镀膜蓝宝石坩埚内 β-Ga2O3 晶体垂直梯度冷冻生长的影响。该研究旨在通过应用 KRIST MAG∼® 加热器产生的洛伦兹力,实现更平整的固液界面,从而促进 β-Ga2O3 晶体生长。为了得出洛伦兹力与关键生长参数之间的关系式,我们使用了 SISSO,这是一种结合了符号回归和压缩传感的机器学习技术。数值结果表明,向上移动的磁场通过抵消浮力、增强涡流强度和使先前凸起的界面变平,极大地改变了固液界面的形状。铂铑合金涂层对洛伦兹力大小的影响微乎其微。洛伦兹力与交流电呈二次函数关系,与相移呈周期性关系,与频率呈不对称高斯曲线关系。压缩传感与数值数据一起产生了一个广泛适用且可解释的方程,用于预测 VGF 生长装置中的洛伦兹力值,并确定相移是一个关键变量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Data-driven feasibility study of VGF β-Ga2O3 growth under traveling magnetic fields
Numerical simulations were conducted to examine the impact of a traveling magnetic field on the vertical gradient freeze growth of β-Ga2O3 crystals within a coated sapphire crucible under an argon-oxygen atmosphere. The research aimed to enhance β-Ga2O3 crystal growth by achieving a flatter solid–liquid interface through the application of Lorentz forces generated by KRIST MAG® heaters. Furthermore, the study sought to identify a coating material that is chemically resistant and has a minimal effect on the magnitude of the Lorentz force.
To derive an equation that relates the Lorentz force with key growth parameters, we utilized SISSO, a machine learning technique combining symbolic regression and compressed sensing. The numerical results indicated that an upward traveling magnetic field significantly modifies the solid–liquid interface shape by counteracting buoyancy, enhancing vortex strength, and flattening the previously convex interface. The Pt-Rh alloy coating demonstrated minimal impact on the Lorentz force magnitude. Lorentz force exhibited a quadratic dependence on AC, periodic with a phase shift, and an asymmetric Gaussian profile with frequency.
Compressed sensing, along with numerical data, produced a broadly applicable and interpretable equation for predicting Lorentz force values in the VGF growth setup, identifying phase shift as a crucial variable.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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