IF 5.3 2区 材料科学 Q1 MATERIALS SCIENCE, COATINGS & FILMS
T.N. Cabrera-Yacuta , G.A. Rodríguez-Castro , A. Meneses Amador , I. Arzate-Vázquez , O. Morales-Contreras , I.E. Campos-Silva , M.A. Melo Pérez
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引用次数: 0

摘要

本研究通过数值方法研究了 Inconel 718 超合金硼化物层中的应力场,这些应力场是由横截面视图中距系统界面不同距离的维氏压痕产生的。对 Inconel 718 采用了三种粉末包硼条件,温度分别为 850、900 和 950 ℃,时间分别为 2、4 和 6 小时。通过 X 射线衍射,主要确定了 Ni4B3、Ni2B 和 Ni3B 相。此外,通过伯科维奇仪器压痕法测定的硬度(H)范围为 23.8 至 26 GPa,杨氏模量(E)范围为 280 至 380 GPa。维氏压痕是在 200 至 1500 N 的载荷范围内,在从扩散区到基底的不同距离上进行的。在硼化物层中发现了裂纹,但裂纹没有延伸到基底或与扩散区的界面处,只有最薄的厚度在 1500 N 时出现了分层。数值模型由一个维氏压头和一个通过横截面定义的三维可变形实体组成,维氏压头被模拟为一个离散的刚体。随着层厚度的增加,系统对外加载荷的敏感度降低,应力场的大小也随之减小。模拟结果表明,最大主应力会导致层内开裂,而剪应力不足以导致分层。形成孔隙率低的层对于避免应力集中最终导致裂纹的产生至关重要。最厚的层/基底系统是在 950 °C、6 小时的条件下形成的,具有更强的抗开裂能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of the stress field by finite element model in boride layers formed in the Inconel 718 superalloy
This research numerically investigates the stress fields in boride layers on Inconel 718 superalloy, generated by Vickers indentations at various distances from the system interface in cross-sectional views. Three powder-pack boriding conditions at 850, 900, and 950 °C for 2, 4, and 6 h, respectively, were applied to Inconel 718. Employing X-ray diffraction, mainly the Ni4B3, Ni2B, and Ni3B phases were identified. In addition, a hardness (H) range between 23.8 and 26 GPa was determined by Berkovich instrumented indentation, while 280 to 380 GPa for Young's modulus (E). Vickers indentations were made in a load range between 200 and 1500 N at different distances from the diffusion zone towards the substrate. The cracks were identified in the boride layer without advancing to the substrate or at the interface with the diffusion zone and only the thinnest thickness presented delamination at 1500 N. The stress fields were analyzed using the finite element method with explicit dynamic analysis. The numerical model consists of a Vickers indenter modeled as a discrete, rigid body and a 3D deformable solid defined through cross sections. As the layer thickness increases, the system becomes less sensitive to applied loads, and the magnitude of the stress fields decreases. Simulation results indicate that maximum principal stresses lead to cracking within the layer, while the shear stresses are insufficient to cause delamination. Forming layers with low porosity is crucial to avoid stress concentrators that could eventually propagate into cracks. The thickest layer/substrate system, produced at 950 °C for 6 h, demonstrates greater resistance to cracking.
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来源期刊
Surface & Coatings Technology
Surface & Coatings Technology 工程技术-材料科学:膜
CiteScore
10.00
自引率
11.10%
发文量
921
审稿时长
19 days
期刊介绍: Surface and Coatings Technology is an international archival journal publishing scientific papers on significant developments in surface and interface engineering to modify and improve the surface properties of materials for protection in demanding contact conditions or aggressive environments, or for enhanced functional performance. Contributions range from original scientific articles concerned with fundamental and applied aspects of research or direct applications of metallic, inorganic, organic and composite coatings, to invited reviews of current technology in specific areas. Papers submitted to this journal are expected to be in line with the following aspects in processes, and properties/performance: A. Processes: Physical and chemical vapour deposition techniques, thermal and plasma spraying, surface modification by directed energy techniques such as ion, electron and laser beams, thermo-chemical treatment, wet chemical and electrochemical processes such as plating, sol-gel coating, anodization, plasma electrolytic oxidation, etc., but excluding painting. B. Properties/performance: friction performance, wear resistance (e.g., abrasion, erosion, fretting, etc), corrosion and oxidation resistance, thermal protection, diffusion resistance, hydrophilicity/hydrophobicity, and properties relevant to smart materials behaviour and enhanced multifunctional performance for environmental, energy and medical applications, but excluding device aspects.
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