TiC颗粒对TiC/Al-Cu复合材料晶界结构和溶质原子扩散的影响

IF 3 4区 材料科学 Q3 CHEMISTRY, PHYSICAL
Dahong Zhao , Zhengbing Xiao , Zhijie Dai , Sunhang Xiao , Xianbin Gao , Jiahao Chen , Li Wan
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引用次数: 0

摘要

金属间TiC颗粒的加入可以大大改善材料的力学性能。然而,TiC颗粒对晶界转变和溶质原子在晶界处扩散行为的影响尚不完全清楚。在这里,我们试图以TiC/Al-Cu复合材料为例来澄清这一点。电子背散射衍射(EBSD)分析表明,TiC粒子阻碍了重合位晶格(CSL)晶界从Σ3向Σ5的转变,从而在TiC/Al-Cu复合材料中保持了较高比例的Σ3晶界。第一性原理计算表明,与Σ5相比,Σ3晶界通过降低空位形成能和扩散能垒降低了扩散活化能,促进了Cu原子沿晶界的快速扩散。进一步的电子结构分析表明,共价键特性的增强和原子间化学键稳定性的增强阻碍了溶质原子的迁移。该研究为界面特性与原子扩散行为之间的联系提供了有价值的理论见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of TiC particles on grain boundary structure and solute atomic diffusion in TiC/Al-Cu composites
The addition of intermetallic TiC particles can greatly improve the mechanical properties of materials. However, the impact of TiC particles on grain boundary transformations and solute atom diffusion behavior at grain boundaries is not fully understood. Here, we attempt to clarify this using TiC/Al-Cu composites as an example. Electron backscatter diffraction (EBSD) analysis revealed that TiC particles hinder the transformation of coincidence site lattice (CSL) grain boundaries from Σ3 to Σ5, thereby maintaining a high proportion of Σ3 grain boundaries in TiC/Al-Cu composites. First-principles calculations reveal that Σ3 grain boundaries, compared with Σ5, lower the diffusion activation energy by reducing the vacancy formation energy and diffusion energy barriers, facilitating rapid diffusion of Cu atoms along the grain boundaries. Further analysis of the electronic structure indicated that the strengthening of the covalent bonding characteristics and enhanced stability of the chemical bonds between atoms impeded the migration of solute atoms. This study offers valuable theoretical insights into the connection between interface characteristics and atomic diffusion behavior.
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来源期刊
Solid State Ionics
Solid State Ionics 物理-物理:凝聚态物理
CiteScore
6.10
自引率
3.10%
发文量
152
审稿时长
58 days
期刊介绍: This interdisciplinary journal is devoted to the physics, chemistry and materials science of diffusion, mass transport, and reactivity of solids. The major part of each issue is devoted to articles on: (i) physics and chemistry of defects in solids; (ii) reactions in and on solids, e.g. intercalation, corrosion, oxidation, sintering; (iii) ion transport measurements, mechanisms and theory; (iv) solid state electrochemistry; (v) ionically-electronically mixed conducting solids. Related technological applications are also included, provided their characteristics are interpreted in terms of the basic solid state properties. Review papers and relevant symposium proceedings are welcome.
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