{"title":"局域表面等离子体增强了Ga2O3紫外光电探测器的光响应性能","authors":"Shuang Zhang , Guoqing Zhang , Hui Wu , Zhen Cui","doi":"10.1016/j.micrna.2024.208063","DOIUrl":null,"url":null,"abstract":"<div><div>The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub> and metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub>-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga<sub>2</sub>O<sub>3</sub>, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga<sub>2</sub>O<sub>3</sub> thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga<sub>2</sub>O<sub>3</sub> thickness.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208063"},"PeriodicalIF":2.7000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors\",\"authors\":\"Shuang Zhang , Guoqing Zhang , Hui Wu , Zhen Cui\",\"doi\":\"10.1016/j.micrna.2024.208063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub> and metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub>-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga<sub>2</sub>O<sub>3</sub>, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga<sub>2</sub>O<sub>3</sub> thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga<sub>2</sub>O<sub>3</sub> thickness.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"198 \",\"pages\":\"Article 208063\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2025-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324003133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324003133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
本研究采用时域有限差分方法分析了结构参数对紫外光吸收的影响,并利用计算机辅助设计技术模拟了日盲紫外光探测器的相关特性。设计了两种吸收结构:金属纳米颗粒- ga2o3和金属纳米颗粒- ga2o3 -金属层。第二种结构在紫外区吸收峰强度超过0.95。通过对共振峰电场的研究,发现纳米颗粒与Ga2O3界面处存在局域表面等离子体共振,显著增强了纳米颗粒对光子能量的吸收,有利于紫外光电探测器的设计。设计了金纳米Ga2O3光电探测器,发现金纳米Ga2O3光电探测器的响应率和外量子效率分别可达4.13 a /W和226%,金纳米粒子和金吸收层显著提高了器件的光电性能。研究了Ga2O3厚度对探测器光电性能的影响,表明通过调整Ga2O3厚度可以提高探测器的光电性能。
Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors
The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga2O3 and metal nanoparticles-Ga2O3-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga2O3, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga2O3 photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga2O3 photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga2O3 thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga2O3 thickness.