{"title":"栅极错位对三金属双栅极垂直TFET电学特性的影响及模拟/射频性能参数的比较","authors":"Rohit R. Kumbhar, Rajesh Agarwal","doi":"10.1016/j.micrna.2024.208048","DOIUrl":null,"url":null,"abstract":"<div><div>During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment, which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure, such as transconductance (g<sub>m</sub>), output conductance (g<sub>ds</sub>), intrinsic gain (A<sub>VO</sub>), total gate capacitance (C<sub>GG</sub>), and cut-off frequency (f<sub>T</sub>), along with threshold voltage (V<sub>Th</sub>) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO<sub>2</sub> and HfO<sub>2</sub> as gate oxide materials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208048"},"PeriodicalIF":2.7000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gate misalignment effect on electrical characteristics and comparison of Analog/RF performance parameters of triple metal dual gate vertical TFET\",\"authors\":\"Rohit R. Kumbhar, Rajesh Agarwal\",\"doi\":\"10.1016/j.micrna.2024.208048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment, which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure, such as transconductance (g<sub>m</sub>), output conductance (g<sub>ds</sub>), intrinsic gain (A<sub>VO</sub>), total gate capacitance (C<sub>GG</sub>), and cut-off frequency (f<sub>T</sub>), along with threshold voltage (V<sub>Th</sub>) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO<sub>2</sub> and HfO<sub>2</sub> as gate oxide materials.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"198 \",\"pages\":\"Article 208048\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2025-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S277301232400298X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S277301232400298X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Gate misalignment effect on electrical characteristics and comparison of Analog/RF performance parameters of triple metal dual gate vertical TFET
During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment, which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure, such as transconductance (gm), output conductance (gds), intrinsic gain (AVO), total gate capacitance (CGG), and cut-off frequency (fT), along with threshold voltage (VTh) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO2 and HfO2 as gate oxide materials.
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