Yue Zhang , Song Bai , Guran Chen , Teng Zhang , Runhua Huang , Shiyan Li , Yong Yang
{"title":"带反t型槽和集成肖特基势垒二极管的4H-SiC双沟槽MOSFET","authors":"Yue Zhang , Song Bai , Guran Chen , Teng Zhang , Runhua Huang , Shiyan Li , Yong Yang","doi":"10.1016/j.micrna.2024.208052","DOIUrl":null,"url":null,"abstract":"<div><div>In this letter, we propose an improved 4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the integrated SBD locates on the bottom of source trench. Numerical simulations have been completed to study the proposed device. The maximum electric field in gate oxide of ITSBD-MOS is suppressed to below 3 MV/cm, while the turn-on voltage in reverse conduction state is lowered to 1.23 V. Besides, due to the introduction of Inverted-T groove, the gate-to-drain charge of the ITSBD-MOS is significantly reduced while the short-circuit capability is obviously improved. The calculated high-frequency figure of merit (HF-FOM = <em>R</em><sub>on,sp</sub> × <em>Q</em><sub>gd</sub>) of ITSBD-MOS is tremendously decreased compared with that of DT-MOS, which suggests that ITSBD-MOS is a promising candidate for external-diode free power electronics applications and high-frequency operations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208052"},"PeriodicalIF":2.7000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode\",\"authors\":\"Yue Zhang , Song Bai , Guran Chen , Teng Zhang , Runhua Huang , Shiyan Li , Yong Yang\",\"doi\":\"10.1016/j.micrna.2024.208052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this letter, we propose an improved 4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the integrated SBD locates on the bottom of source trench. Numerical simulations have been completed to study the proposed device. The maximum electric field in gate oxide of ITSBD-MOS is suppressed to below 3 MV/cm, while the turn-on voltage in reverse conduction state is lowered to 1.23 V. Besides, due to the introduction of Inverted-T groove, the gate-to-drain charge of the ITSBD-MOS is significantly reduced while the short-circuit capability is obviously improved. The calculated high-frequency figure of merit (HF-FOM = <em>R</em><sub>on,sp</sub> × <em>Q</em><sub>gd</sub>) of ITSBD-MOS is tremendously decreased compared with that of DT-MOS, which suggests that ITSBD-MOS is a promising candidate for external-diode free power electronics applications and high-frequency operations.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"198 \",\"pages\":\"Article 208052\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2025-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324003029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324003029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode
In this letter, we propose an improved 4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the integrated SBD locates on the bottom of source trench. Numerical simulations have been completed to study the proposed device. The maximum electric field in gate oxide of ITSBD-MOS is suppressed to below 3 MV/cm, while the turn-on voltage in reverse conduction state is lowered to 1.23 V. Besides, due to the introduction of Inverted-T groove, the gate-to-drain charge of the ITSBD-MOS is significantly reduced while the short-circuit capability is obviously improved. The calculated high-frequency figure of merit (HF-FOM = Ron,sp × Qgd) of ITSBD-MOS is tremendously decreased compared with that of DT-MOS, which suggests that ITSBD-MOS is a promising candidate for external-diode free power electronics applications and high-frequency operations.
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