Linearity performance and harmonic distortion analysis of gate-over-pockets hetero-dielectric dual-metal-double-gate TFET for RF applications

To overcome the CMOS scaling challenges, tunnel field effect transistors (TFETs) are identified as the most promising solution for low power applications. With their ever-increasing demand and recent inclusion in advanced technology nodes, further investigation of TFETs for radio frequency (RF) applications is required. In this work, linearity and harmonic distortion of our proposed gate-over-pockets hetero-dielectric dual-metal-double-gate (GoP-HD-DMDG) TFET, which offers steep subthreshold slope and lower ambipolarity is investigated using well-known performance metrics such as second-order and third-order voltage intercept point ($VI{P}_2$ and $VI{P}_3$), 1-dB compression point, third-order input intercept point ($II{P}_3$), second-order and third-order harmonic distortion ($H{D}_2$ and $H{D}_3$). The comparison of GoP-HD-DMDG-TFET with conventional double-gate (DG) TFET and hetero-dielectric double-gate (HD-DG) TFET is carried out. Through simulation results, it is observed that the GoP-HD-DMDG TFET offers comparatively better linearity and less distortion than their counterparts, making it the appropriate choice for radio frequency applications.