IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Beiyun Liu , Chengjie Zhi , Guanxia Dai , Boxing An , Feihong Chu , Jicheng Mo , Xiuyan Zhang
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引用次数: 0

摘要

基于二维(2D)材料的光电探测器是近年来的研究热点,尤其是黑磷(BP),由于其具有直接带隙和仅0.3 eV带隙的良好特性而受到研究人员的青睐。然而,基于BP的器件光响应性较低,材料容易降解,不利于其在光电探测器上的研究。我们通过沉积电极,然后用干转移方法转移材料,构建了BP和钼二硒化钼(MoSe2)异质结光电探测器。p型BP和n型MoSe2形成pn结,产生内置电场,有助于分离光生电子-空穴对,提高光探测效率。该器件在Vds = 1 V, Vg = 0 V时的最大光响应率和比检出率分别为0.167 a /W和1.2 × 1010 Jones。光检测的范围可以从450到2400 nm。我们的工作对红外探测器中二维材料异质结的研究具有积极的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Ultra-wide range infrared photodetector based on BP/MoSe2 heterojunction

Ultra-wide range infrared photodetector based on BP/MoSe2 heterojunction
Two-dimensional (2D) materials based photodetectors is a hot research field in recent years, especially black phosphorus (BP), which has been favored by researchers due to its benign properties of direct bandgap and bandgap of only 0.3 eV. However, devices based on BP only have low photoresponsivity and the material is prone to degradation, which is not conducive to their research in photodetectors. We constructed a BP and molybdenum molybdenum diselenide (MoSe2) heterojunction photodetector by depositing electrodes and then transferring materials using a dry transfer method. A pn junction is formed by p-type BP and n-type MoSe2, which generates a built-in electric field that helps to separate the photogenerated electron-hole pairs and improve the efficiency of photo detection. The device has a maximum photoresponsivity and specific detectivity of 0.167 A/W and 1.2 × 1010 Jones at Vds = 1 V, Vg = 0 V. The range of photo detection can be from 450 to 2400 nm. Our work has a positive impact on the research of two-dimensional material heterojunctions for infrared photodetectors.
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CiteScore
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