确定了不同体积分数SiC/Ti6Al4V(ELI)复合材料选择性激光熔化的最佳孵育距离

Masenate Thamae , Maina Maringa , Willie Bouwer du Preez
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引用次数: 0

摘要

本研究的目的是确定不同SiC体积分数的选择性激光烧结SiC/Ti6Al4V(ELI)复合材料的最佳孵育距离。该复合材料的组分具有不同的热物理性质,这导致了不同SiC体积分数的熔体特性不同。不重叠的轨迹会导致层剥离和气孔的产生,从而降低最终增材制造零件的机械质量,而高重叠率会导致材料的低效使用和零件的长时间制造。因此,需要探索不同的孵化距离,以确定每个SiC体积分数的最佳重叠率。本文采用100 ~ 350 W的激光功率和0.3 ~ 2.7 m/s的扫描速度打印单层材料。分别以50 μm、60 μm、70 μm、80 μm、90 μm、100 μm和110 μm的孔径构建不同SiC体积分数的单层。各SiC体积分数的激光功率、扫描速度、线性能量密度、层厚等参数均保持恒定。使用扫描电子显微镜对打印层进行横截面分析,以研究相邻轨道的重叠程度,内部孔隙以及单层中渗透到基材中的深度变化,同时进行顶表面分析,以研究表面粗糙度,相邻轨道的表面互连以及表面不规则性的形成。本文收集和分析的数据表明,当SiC体积分数为5% ~ 25%时,孵化距离最佳,而当SiC体积分数为30%时,孵化距离不最佳。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Determining the best hatch distances for selective laser melted SiC/Ti6Al4V(ELI) composites of different volume fractions of SiC
The goal of this research was to determine the best hatch distances for different SiC volume fractions of selective laser sintered SiC/Ti6Al4V(ELI) composites. The constituents of this composite have different thermal physical properties, which give rise to different melt characteristics of different SiC volume fractions. Non-overlapped tracks lead to debonding of the layers and the production of pores, which degrade the mechanical qualities of the final additively manufactured parts, whereas high overlap rates lead to inefficient use of material and long build times of parts. As a result, different hatch distances should be explored to determine the best overlap rate for each SiC volume fraction. To print single layers in the present work, different laser powers ranging from 100 W to 350 W and scanning speeds ranging from 0.3 m/s to 2.7 m/s were used. The single layers for each SiC volume fraction were built with different hatch distances of 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, and 110 μm. The parameters of laser power, scanning speed and therefore, linear energy density, as well as layer thickness, for each SiC volume fraction were kept constant. A cross-sectional analysis of the printed layers was performed with a scanning electron microscope to investigate the degree of overlapping of adjacent tracks, internal pores, and variation in the depth of penetration into the substrate in a single layer, while a top-surface analysis was performed to investigate surface roughness, surface interconnection of the adjacent tracks, and the formation of surface irregularities. The data collected and analysis carried out here yielded values of best hatch distances at SiC volume fractions ranging from 5 % to 25 %, while no best hatch distances were achieved at an SiC volume fraction of 30 %.
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CiteScore
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